Search Results - "Chang-Liao, Kuei-Shu" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Imaging Off‐Resonance Nanomechanical Motion as Modal Superposition

Imaging Off‐Resonance Nanomechanical Motion as Modal Superposition

by Esmenda, Joshoua Condicion, Aguila, Myrron Albert Callera, Wang, Jyh‐Yang, Lee, Teik‐Hui, Yang, Chi‐Yuan, Lin, Kung‐Hsuan, Chang‐Liao, Kuei‐Shu, Katz, Nadav, Kafanov, Sergey, Pashkin, Yuri A., Chen, Chii‐Dong
Published in Advanced science (01.07.2021)

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High Performance Ge pMOSFETs With HfO2/Hf-Cap/GeOx Gate Stack and Suitable Post Metal Annealing Treatments

High Performance Ge pMOSFETs With HfO2/Hf-Cap/GeOx Gate Stack and Suitable Post Metal Annealing Treatments

by Shih-Han Yi, Kuei-Shu Chang-Liao, Tzung-Yu Wu, Chia-Wei Hsu, Jiayi Huang
Published in IEEE electron device letters (01.05.2017)

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Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices

Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices

by CHENG, Chin-Lung, LU, Chun-Yuan, CHANG-LIAO, Kuei-Shu, HUANG, Ching-Hung, WANG, Sheng-Hung, WANG, Tien-Ko
Published in IEEE transactions on electron devices (2006)

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Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric

Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric

by Li, Chen-Chien, Chang-Liao, Kuei-Shu, Chi, Wei-Fong, Li, Mong-Chi, Chen, Ting-Chun, Su, Tzu-Hsiang, Chang, Yu-Wei, Tsai, Chia-Chi, Liu, Li-Jung, Fu, Chung-Hao, Lu, Chun-Chang
Published in IEEE electron device letters (01.01.2016)

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Twin Thin-Film Transistor Nonvolatile Memory With an Indium-Gallium-Zinc-Oxide Floating Gate

Twin Thin-Film Transistor Nonvolatile Memory With an Indium-Gallium-Zinc-Oxide Floating Gate

by Hung, Min-Feng, Wu, Yung-Chun, Chang, Jiun-Jye, Chang-Liao, Kuei-Shu
Published in IEEE electron device letters (01.01.2013)

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An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer

An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer

by Fu, Chung-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Li, Chen-Chien, Chen, Ting-Ching, Cheng, Jen-Wei, Lu, Chun-Chang
Published in IEEE transactions on electron devices (01.08.2014)

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A Highly Scalable Single Poly-Silicon Embedded Electrically Erasable Programmable Read Only Memory With Tungsten Control Gate by Full CMOS Process

A Highly Scalable Single Poly-Silicon Embedded Electrically Erasable Programmable Read Only Memory With Tungsten Control Gate by Full CMOS Process

by Chih-Ping Chung, Kuei-Shu Chang-Liao
Published in IEEE electron device letters (01.04.2015)

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Electrical Characteristics and Thermal Stability of [Formula Omitted] Metal Gate Electrode for Advanced MOS Devices

Electrical Characteristics and Thermal Stability of [Formula Omitted] Metal Gate Electrode for Advanced MOS Devices

by Chang-Ta Yang, Chang-Ta Yang, Kuei-Shu Chang-Liao, Kuei-Shu Chang-Liao, Hsin-Chun Chang, Hsin-Chun Chang, Chung-Hao Fu, Chung-Hao Fu, Tien-Ko Wang, Tien-Ko Wang, Wen-Fa Tsai, Wen-Fa Tsai, Chi-Fong Ai, Chi-Fong Ai, Wen-Fa Wu, Wen-Fa Wu
Published in IEEE transactions on electron devices (01.11.2008)

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High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

by Yao, Yi-Ju, Yang, Ching-Ru, Tseng, Ting-Yu, Chang, Heng-Jia, Lin, Tsai-Jung, Luo, Guang-Li, Hou, Fu-Ju, Wu, Yung-Chun, Chang-Liao, Kuei-Shu
Published in Nanomaterials (Basel, Switzerland) (08.04.2023)

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Detection of Stress-Induced Interface Trap Generation on High- k Gated nMOSFETs in Real Time by Stress-and-Sense Charge Pumping Technique

Detection of Stress-Induced Interface Trap Generation on High- k Gated nMOSFETs in Real Time by Stress-and-Sense Charge Pumping Technique

by Lu, Chun-Chang, Chang-Liao, Kuei-Shu, Tsai, Fu-Huan, Li, Chen-Chien, Wang, Tien-Ko
Published in IEEE transactions on electron devices (01.05.2015)

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Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process

Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process

by Chih-Ping Chung, Kuei-Shu Chang-Liao, Chun-Yuan Chen
Published in IEEE transactions on electron devices (01.09.2014)

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Fe-Vacancy-Ordered Fe4Se5: The Insulating Parent Phase of FeSe Superconductor

Fe-Vacancy-Ordered Fe4Se5: The Insulating Parent Phase of FeSe Superconductor

by Yeh, Keng-Yu, Chen, Yan-Ruei, Lo, Tung-Sheng, Wu, Phillip M., Wang, Ming-Jye, Chang-Liao, Kuei-Shu, Wu, Maw-Kuen
Published in Frontiers in physics (13.11.2020)

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Reliability and Thermal Stability of Clustered Vertical Furnace-Grown SiO2 With HfxTayN Metal Gate for Advanced MOS Device Application

Reliability and Thermal Stability of Clustered Vertical Furnace-Grown SiO2 With HfxTayN Metal Gate for Advanced MOS Device Application

by Kuei-Shu Chang-Liao, Kuei-Shu Chang-Liao, Chin-Lung Cheng, Chin-Lung Cheng, Chun-Yuan Lu, Chun-Yuan Lu, Bhabani Shankar Sahu, Bhabani Shankar Sahu, Tzu-Chen Wang, Tzu-Chen Wang, Tien-Ko Wang, Tien-Ko Wang, Shang-Feng Huang, Shang-Feng Huang, Wen-Fa Tsai, Wen-Fa Tsai, Chi-Fong Ai, Chi-Fong Ai
Published in IEEE transactions on electron devices (01.02.2007)

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Photothermal Responsivity of van der Waals Material-Based Nanomechanical Resonators

Photothermal Responsivity of van der Waals Material-Based Nanomechanical Resonators

by Aguila, Myrron Albert Callera, Esmenda, Joshoua Condicion, Wang, Jyh-Yang, Chen, Yen-Chun, Lee, Teik-Hui, Yang, Chi-Yuan, Lin, Kung-Hsuan, Chang-Liao, Kuei-Shu, Kafanov, Sergey, Pashkin, Yuri A, Chen, Chii-Dong
Published in Nanomaterials (Basel, Switzerland) (04.08.2022)

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Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High- k Gated MOSFETs by a Modified Charge Pumping Technique

Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High- k Gated MOSFETs by a Modified Charge Pumping Technique

by Lu, Chun-Chang, Chang-Liao, Kuei-Shu, Tsao, Che-Hao, Wang, Tien-Ko, Ko, Hsueh-Chao, Hsu, Yao-Tung
Published in IEEE transactions on electron devices (01.04.2014)

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Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

by Chen, Chun-Yuan, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Chen, Wei-Chieh, Wang, Tien-Ko
Published in IEEE electron device letters (01.10.2014)

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Subthreshold Modeling of GAA MOSFET Including the Effect of Process-Induced Inclined Sidewalls

Subthreshold Modeling of GAA MOSFET Including the Effect of Process-Induced Inclined Sidewalls

by Kumari, Tripty, Tiwari, Pramod Kumar, Singh, Jawar, Chang-Liao, Kuei-Shu
Published in IEEE transactions on electron devices (01.02.2022)

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Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

by Liu, Li-Jung, Chang-Liao, Kuei-Shu, Jian, Yi-Chuen, Cheng, Jen-Wei, Wang, Tien-Ko, Tsai, Ming-Jinn
Published in IEEE electron device letters (01.09.2012)

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Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

by Fu, Chung-Hao, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Hsieh, Hsiao-Chi, Lu, Chun-Chang, Li, Chen-Chien, Wang, Tien-Ko, Heh, Da-Wei
Published in IEEE electron device letters (01.02.2012)

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Electrical Degradation and Recovery of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors With Various Metal Gate Patterns

Electrical Degradation and Recovery of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors With Various Metal Gate Patterns

by CHANG, Jiun-Jye, CHANG-LIAO, Kuei-Shu, LI, Chen-Chien
Published in IEEE transactions on electron devices (01.12.2012)

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