Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment
Liu, Jia-Cheng, Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Liu, Guan-Ting
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
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Conference Proceeding
Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric
Li-Jung Liu, Kuei-Shu Chang-Liao, Chung-Hao Fu, Ting-Ching Chen, Jen-Wei Cheng, Chen-Chien Li, Chun-Chang Lu, Tien-Ko Wang
Published in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2013)
Published in 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2013)
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Conference Proceeding
Electrical characteristic enhancement of metal–oxide–semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface
Cheng, Chin-Lung, Chang-Liao, Kuei-Shu, Chang, Hsin-Chun, Wang, Tien-Ko
Published in Solid-state electronics (01.06.2006)
Published in Solid-state electronics (01.06.2006)
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Process Engineering and Trap Distribution for Dielectric/Si Interfacial Layer in High-k Gated MOS Devices
Chang-Liao, Kuei-Shu, Fu, Chung-Hao, Lu, Chun-Chang, Chang, Yu-An, Hsu, Ya-Yin, Tsao, Che-Hao, Wang, Tien-Ko, Heh, Da-Wei, Li, Y.C., Tsai, Wen-Fa, Ai, Chi-Fong, Hou, Fu-Chung, Hsu, Yao-Tung
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Journal Article
Advance in next Century nanoCMOSFET research
Hwang, Huey-Liang, Chiou, Yan-Kai, Chang, Che-Hao, Wang, Chen-Chan, Lee, Kun-Yu, Wu, Tai-Bor, Kwo, Raynien, Hong, Minghwei, Chang-Liao, Kuei-Shu, Lu, Chun-Yuan, Lu, Chun-Chang, Chiu, Fu-Chien, Chen, Chun-Heng, Lee, Joseph Ya-Min, Chin, Albert
Published in Applied surface science (31.10.2007)
Published in Applied surface science (31.10.2007)
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Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices
CHENG, Chin-Lung, LIU, Chien-Wei, CHANG-LIAO, Kuei-Shu, TSAI, Ping-Hung, JENG, Jin-Tsong, HUANG, Sung-Wei, DAI, Bau-Tong
Published in Solid-state electronics (01.10.2008)
Published in Solid-state electronics (01.10.2008)
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Journal Article
Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment
Chen, Wei-Ren, Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Wang, Hao-Yan, Luo, Guang-Li, Chiu, Yu-Chuan, Kuan, Ting-Kai, Liu, Po-Tsun
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
Published in 2023 Silicon Nanoelectronics Workshop (SNW) (11.06.2023)
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Conference Proceeding
Very low EOT and high oxidation state interfacial layer in Ge MOS devices
Szu-Chun Yu, Kuei-Shu Chang-Liao, Mong-Chi Li, Wei-Fong Chi, Chen-Chien Li, Li-Jung Liu, Tzu-Min Lee, Yu-Wei Chang, Hsin-Kai Fang, Chung-Hao Fu, Chun-Chang Lu, Zong-Hao Ye, Tien-Ko Wang
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)
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Conference Proceeding
Electrical and material property enhancement in HfTaSiON-gated MOS devices by tuning Hf composition
Tsai, Ping-Hung, Chang-Liao, Kuei-Shu, Chang, Hsin-Chun, Wang, Tien-Ko, Wu, Wen-Fa
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Reliability and Thermal Stability of Clustered Vertical Furnace-Grown \hbox With \hbox\hbox\hbox Metal Gate for Advanced MOS Device Application
Kuei-Shu Chang-Liao, Chin-Lung Cheng, Chun-Yuan Lu, Sahu, B.S., Tzu-Chen Wang, Tien-Ko Wang, Shang-Feng Huang, Wen-Fa Tsai, Chi-Fong Ai
Published in IEEE transactions on electron devices (01.02.2007)
Published in IEEE transactions on electron devices (01.02.2007)
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Journal Article
Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
Tsai, Bo-An, Lee, Yao-Jen, Peng, Hsin-Yi, Tzeng, Pei-Jer, Luo, Chih-wei, Chang-Liao, Kuei-Shu
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices
Chin-Lung Cheng, Chun-Yuan Lu, Kuei-Shu Chang-Liao, Ching-Hung Huang, Sheng-Hung Wang, Tien-Ko Wang
Published in IEEE transactions on electron devices (01.01.2006)
Published in IEEE transactions on electron devices (01.01.2006)
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Journal Article
Performance and reliability improvement of flash device by a novel programming method
Ho, Chia-Huai, Chang-Liao, Kuei-Shu, Huang, Ya-Nan, Wang, Tien-Ko, Lu, T.C.
Published in Microelectronics and reliability (01.06.2007)
Published in Microelectronics and reliability (01.06.2007)
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Journal Article
Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII)
Tsai, Ping-Hung, Chang-Liao, Kuei-Shu, Kao, H.Y., Wang, T.K., Huang, S.F., Tsai, W.F., Ai, C.F.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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