Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation
Lin, Yu-Hsien, Wu, Yung-Chun, You, Hsin-Chiang, Chen, Chun-Hao, Chen, Ping-Hua, Tsai, Yi-He, Yang, Yi-Yun, Chang-Liao, K S
Published in Energies (Basel) (01.06.2014)
Published in Energies (Basel) (01.06.2014)
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Monitoring the moisture-related degradation of ethylene propylene rubber cable by electrical and SEM methods
Hsu, Y.T., Chang-Liao, K.S., Wang, T.K., Kuo, C.T.
Published in Polymer degradation and stability (01.10.2006)
Published in Polymer degradation and stability (01.10.2006)
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Journal Article
Magnetoresistance fluctuations in a weak disorder indium nitride nanowire
Su, Y W, Aravind, K, Wu, C S, Kuo, Watson, Chen, K H, Chen, L C, Chang-Liao, K S, Su, W F, Chen, C D
Published in Journal of physics. D, Applied physics (21.09.2009)
Published in Journal of physics. D, Applied physics (21.09.2009)
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Journal Article
Copper stress migration at narrow metal finger with wide lead
Wang, Robin C.J., Chang-Liao, K.S., Oates, A.S., Lee, C.C., Chen, L.D., Chiu, C.C., Wu, Kenneth
Published in Microelectronic engineering (01.11.2007)
Published in Microelectronic engineering (01.11.2007)
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Conference Proceeding
Development of separation techniques for analysis of Nb-94 in radwaste samples
Kuo, C.L., Tsai, T.L., Chang-Liao, K.S., Chao, J.H.
Published in Applied radiation and isotopes (01.10.2017)
Published in Applied radiation and isotopes (01.10.2017)
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A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric
FU, C. H, CHANG-LIAO, K. S, CHANG, Y. A, HSU, Y. Y, TZENG, T. H, WANG, T. K, HEH, D. W, GO, P. Y, TSAI, M. J
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Electrical conduction and TDDB reliability characterization for low- k SiCO dielectric in Cu interconnects
Wang, Robin C.J., Chang-Liao, K.S., Wang, T.K., Chang, M.N., Wang, C.S., Lin, C.H., Lee, C.C., Chiu, C.C., Wu, Kenneth
Published in Thin solid films (01.12.2008)
Published in Thin solid films (01.12.2008)
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Conference Proceeding
Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor
Aravind, K, Lin, M C, Ho, I L, Wu, C S, Kuo, Watson, Kuan, C H, Chang-Liao, K S, Chen, C D
Published in Journal of nanoscience and nanotechnology (01.03.2012)
Published in Journal of nanoscience and nanotechnology (01.03.2012)
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A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect
Wang, Robin C.J., Lee, C.C., Chen, L.D., Wu, Kenneth, Chang-Liao, K.S.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Conference Proceeding
Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead
Wang, Robin C.J., Chang-Liao, K.S., Wang, T.K., Lee, C.C., Lin, J.H., Oates, A.S., Lee, S.C., Wu, Kenneth
Published in Thin solid films (03.12.2007)
Published in Thin solid films (03.12.2007)
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Conference Proceeding
Magnetic-field and temperature dependence of the energy gap in InN nanobelt
Aravind, K., Su, Y. W., Chung, D. S., Kuo, Watson, Wu, C. S., Chang-Liao, K. S., Chen, K. H., Chen, L. C., Chen, C. D.
Published in AIP advances (01.03.2012)
Published in AIP advances (01.03.2012)
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Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation
Tzeng, Pei-Jer, Wu, Bone-Fung, Chang-Liao, Kuei-Shu
Published in Japanese Journal of Applied Physics (01.06.2001)
Published in Japanese Journal of Applied Physics (01.06.2001)
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Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material
Pei-Jer Tzeng, Yi-Yuan Chang, Kuei-Shu Chang-Liao
Published in IEEE electron device letters (01.11.2001)
Published in IEEE electron device letters (01.11.2001)
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PHYSICAL AND RELIABILITY CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR DEVICES WITH HfOxNy GATE DIELECTRICS ON DIFFERENT SURFACE-ORIENTED SUBSTRATES
Cheng, C-L, Chang-Liao, K-S, Wang, P-L, Wang, T-K
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 5A, pp. L599-L601. 2004 (01.05.2004)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 5A, pp. L599-L601. 2004 (01.05.2004)
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Determination of 129I in cement-solidified radwastes using neutron activation
Kuo, C. L., Tsai, T. L., Chiang, A. C., Chang-Liao, K. S., Chao, J. H.
Published in Journal of radioanalytical and nuclear chemistry (01.10.2013)
Published in Journal of radioanalytical and nuclear chemistry (01.10.2013)
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Silicon dioxide/silicon interfacial strain analyzed by infrared spectroscopy
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Conference Proceeding
Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition
Li, Chen-Chien, Chang-Liao, Kuei-Shu, Fu, Chung-Hao, Hsieh, Tsung-Lin, Chen, Li-Ting, Liao, Yu-Liang, Lu, Chun-Chang, Wang, Tien-Ko
Published in Microelectronic engineering (01.09.2013)
Published in Microelectronic engineering (01.09.2013)
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