A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications
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Published in IEEE electron device letters (01.10.2022)
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Mechanical and Magnetic Properties of the High-Entropy Alloys for Combinatorial Approaches
Huang, E-Wen, Hung, Guo-Yu, Lee, Soo Yeol, Jain, Jayant, Chang, Kuan-Pang, Chou, Jing Jhe, Yang, Wen-Chi, Liaw, Peter K.
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Published in Crystals (Basel) (01.03.2020)
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