Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
Get full text
Journal Article
Optimization of TaSi2 Processing for 500 °C Durable SiC JFET-R Integrated Circuits
Rajgopal, Srihari, Neudeck, Philip G., Spry, David J., Chang, Carl W., Gonzalez, Jose M.
Published in Key engineering materials (06.06.2023)
Published in Key engineering materials (06.06.2023)
Get full text
Journal Article
Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C
NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
Get full text
Journal Article
Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
Lukco, Dorothy, Beheim, Glenn M., Spry, David J., Neudeck, Philip G., Chang, Carl W., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits
Chang, Carl W., Neudeck, Philip G., Beheim, Glenn M., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu, Spry, David J., Lukco, Dorothy
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
Get full text
Journal Article
Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C
Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Get full text
Conference Proceeding
Journal Article
Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect
Neudeck, Philip G., Spry, David J., Evans, Laura J., Lukco, Dorothy, Chang, Carl W., Chen, Liang Yu, Beheim, Glenn M.
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Reducing DRIE-Induced Trench Effects in SiC Pressure Sensors Using FEA Prediction
Okojie, Robert S., Chang, Carl W., Evans, Laura J.
Published in Journal of microelectromechanical systems (01.10.2011)
Published in Journal of microelectromechanical systems (01.10.2011)
Get full text
Journal Article
Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox
Neudeck, P.G., Spry, D.J., Liang-Yu Chen, Beheim, G.M., Okojie, R.S., Chang, C.W., Meredith, R.D., Ferrier, T.L., Evans, L.J., Krasowski, M.J., Prokop, N.F.
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
Get full text
Journal Article
Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits
Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Prokop, Norman F., Beheim, Glenn M., Chen, Liang-Yu, Chang, Carl W.
Published in Journal of microelectronics and electronic packaging (01.10.2018)
Published in Journal of microelectronics and electronic packaging (01.10.2018)
Get full text
Journal Article
4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K
Spry, David J, Neudeck, Phil G, Chen, Liangyu, Chang, Carl W, Lukco, Dorothy, Beheim, Glenn M.
Published in ECS transactions (21.09.2015)
Published in ECS transactions (21.09.2015)
Get full text
Journal Article
Characterization of Silicon Carbide Pressure Sensors at 800 °C
Okojie, Robert S., Lukco, Dorothy, Chang, Carl W., Savrun, Ender
Published in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) (01.06.2019)
Published in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) (01.06.2019)
Get full text
Conference Proceeding
Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C
Neudeck, Philip G, Spry, David J, Chen, Liangyu, Lukco, Dorothy, Chang, Carl W, Beheim, Glenn M
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (25.09.2016)
Get full text
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (25.09.2016)
Conference Proceeding
4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K
Spry, David J, Neudeck, Phil G, Chen, Liangyu, Chang, Carl W, Lukco, Dorothy, Beheim, Glenn M.
Published in Meeting abstracts (Electrochemical Society) (07.07.2015)
Published in Meeting abstracts (Electrochemical Society) (07.07.2015)
Get full text
Journal Article
Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect
Spry, David J, Neudeck, Philip G, Liangyu, Chen, Evans, Laura J, Lukco, Dorothy, Chang, Carl W, Beheim, Glenn M
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (04.10.2015)
Get full text
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (04.10.2015)
Conference Proceeding
Electrical Characterization of 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design
Neudeck, Philip G, Chen, Liangyu, Spry, David J, Beheim, Glenn M, Chang, Carl W
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (21.09.2014)
Get full text
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (21.09.2014)
Conference Proceeding
Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated Circuits
Spry, David J, Neudeck, Philip G, Chen, Liang-Yu, Lukco, Dorothy, Chang, Carl W, Beheim, Glenn M, Krasowski, Michael J, Prokop, Norman F
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (10.05.2016)
Get full text
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (10.05.2016)
Conference Proceeding
Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
Spry, David J, Neudeck, Philip G, Chen, Liangyu, Lukco, Dorothy, Chang, Carl W, Beheim, Glenn M, Krasowski, Michael J, Prokop, Norman F
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (04.10.2015)
Get full text
Published in NASA Center for AeroSpace Information (CASI). Conference Proceedings (04.10.2015)
Conference Proceeding