Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices
Middleton, Callum, Chandrasekar, Hareesh, Singh, Manikant, Pomeroy, James W., Uren, Michael J., Francis, Daniel, Kuball, Martin
Published in Applied physics express (01.02.2019)
Published in Applied physics express (01.02.2019)
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Journal Article
Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
Chandrasekar, Hareesh, Kumar, Sandeep, Ganapathi, Kolla Lakshmi, Prabhu, Shreesha, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Raghavan, Srinivasan, Bhat, K. N., Mohan, Sangeneni, Muralidharan, Rangarajan, Bhat, Navakanta, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs
Shankar, Bhawani, Soni, Ankit, Chandrasekar, Hareesh, Raghavan, Srinivasan, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.08.2019)
Published in IEEE transactions on electron devices (01.08.2019)
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Journal Article
"Kink" in AlGaN/GaN-HEMTs: Floating Buffer Model
Singh, Manikant, Uren, Michael J., Martin, Trevor, Karboyan, Serge, Chandrasekar, Hareesh, Kuball, Martin
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor
Venugopalarao, Anirudh, Kanta, Shantveer, Chandrasekar, Hareesh, Gowrisankar, Aniruddhan, Rengarajan, Muralidharan R., Nath, Digbijoy N., Raghavan, Srinivasan
Published in Physica status solidi. A, Applications and materials science (21.07.2024)
Published in Physica status solidi. A, Applications and materials science (21.07.2024)
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Journal Article
Study of TaN-Gated p-GaN E-Mode HEMT
Baby, Rijo, Reshma, K., Chandrasekar, Hareesh, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
Chandrasekar, Hareesh, Bhat, K. N., Rangarajan, Muralidharan, Raghavan, Srinivasan, Bhat, Navakanta
Published in Scientific reports (16.11.2017)
Published in Scientific reports (16.11.2017)
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Journal Article
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs
Baby, Rijo, Venugopalrao, Anirudh, Chandrasekar, Hareesh, Raghavan, Srinivasan, Rangarajan, Muralidharan, Nath, Digbijoy N
Published in Semiconductor science and technology (01.03.2022)
Published in Semiconductor science and technology (01.03.2022)
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Journal Article
Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications
Gowrisankar, Aniruddhan, Charan, Vanjari Sai, Chandrasekar, Hareesh, Venugopalarao, Anirudh, Muralidharan, R., Raghavan, Srinivasan, Nath, Digbijoy N.
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
Estimation of background carrier concentration in fully depleted GaN films
Chandrasekar, Hareesh, Singh, Manikant, Raghavan, Srinivasan, Bhat, Navakanta
Published in Semiconductor science and technology (01.11.2015)
Published in Semiconductor science and technology (01.11.2015)
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Journal Article
Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
Chandrasekar, Hareesh, Uren, Michael J., Casbon, Michael A., Hirshy, Hassan, Eblabla, Abdalla, Elgaid, Khaled, Pomeroy, James W., Tasker, Paul J., Kuball, Martin
Published in IEEE transactions on electron devices (01.04.2019)
Published in IEEE transactions on electron devices (01.04.2019)
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Journal Article
All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions
Hasan, Syed M N, Gunning, Brendan P, J.-Eddine, Zane, Chandrasekar, Hareesh, Crawford, Mary H, Armstrong, Andrew, Rajan, Siddharth, Arafin, Shamsul
Published in Journal of physics. D, Applied physics (15.04.2021)
Published in Journal of physics. D, Applied physics (15.04.2021)
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Journal Article
Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates
Chandrasekar, Hareesh, Uren, Michael J., Eblabla, Abdalla, Hirshy, Hassan, Casbon, Michael A., Tasker, Paul J., Elgaid, Khaled, Kuball, Martin
Published in IEEE electron device letters (01.10.2018)
Published in IEEE electron device letters (01.10.2018)
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Journal Article
Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
Chandrasekar, Hareesh, Razzak, Towhidur, Wang, Caiyu, Reyes, Zeltzin, Majumdar, Kausik, Rajan, Siddharth
Published in Advanced electronic materials (01.08.2020)
Published in Advanced electronic materials (01.08.2020)
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Journal Article
High Current Density SmTiO3/SrTiO3 Field-Effect Transistors
Chandrasekar, Hareesh, Ahadi, Kaveh, Razzak, Towhidur, Stemmer, Susanne, Rajan, Siddharth
Published in ACS applied electronic materials (25.02.2020)
Published in ACS applied electronic materials (25.02.2020)
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Journal Article
High Current Density SmTiO 3 /SrTiO 3 Field-Effect Transistors
Chandrasekar, Hareesh, Ahadi, Kaveh, Razzak, Towhidur, Stemmer, Susanne, Rajan, Siddharth
Published in ACS applied electronic materials (25.02.2020)
Published in ACS applied electronic materials (25.02.2020)
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Journal Article
Intrinsic limits of channel transport hysteresis in graphene-SiO 2 interface and its dependence on graphene defect density
Krishna Bharadwaj, B, Chandrasekar, Hareesh, Nath, Digbijoy, Pratap, Rudra, Raghavan, Srinivasan
Published in Journal of physics. D, Applied physics (06.07.2016)
Published in Journal of physics. D, Applied physics (06.07.2016)
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Journal Article