Electro-Thermal Investigation of GaN Vertical Trench MOSFETs
Chatterjee, Bikramjit, Ji, Dong, Agarwal, Anchal, Chan, Silvia H., Chowdhury, Srabanti, Choi, Sukwon
Published in IEEE electron device letters (01.05.2021)
Published in IEEE electron device letters (01.05.2021)
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Journal Article
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices
Chan, Silvia H., Tahhan, Maher, Liu, Xiang, Bisi, Davide, Gupta, Chirag, Koksaldi, Onur, Li, Haoran, Mates, Tom, DenBaars, Steven P., Keller, Stacia, Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
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Journal Article
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN
Chan, Silvia H., Bisi, Davide, Liu, Xiang, Yeluri, Ramya, Tahhan, Maher, Keller, Stacia, DenBaars, Steven P., Meneghini, Matteo, Mishra, Umesh K.
Published in Journal of applied physics (07.11.2017)
Published in Journal of applied physics (07.11.2017)
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Journal Article
Corrections to "In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates' [Mar 17 353-355]
Gupta, Chirag, Lund, Cory, Chan, Silvia H., Agarwal, Anchal, Liu, Junqian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.02.2018)
Published in IEEE electron device letters (01.02.2018)
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Journal Article
OG-FET: An In-Situ xide, aN Interlayer-Based Vertical Trench MOSFET
Gupta, Chirag, Chan, Silvia H., Enatsu, Yuuki, Agarwal, Anchal, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.12.2016)
Published in IEEE electron device letters (01.12.2016)
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Journal Article
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN AlN and GaN AlN AlGaN heterostructures
Li, Haoran, Keller, Stacia, Chan, Silvia H, Lu, Jing, DenBaars, Steven P, Mishra, Umesh K
Published in Semiconductor science and technology (01.05.2015)
Published in Semiconductor science and technology (01.05.2015)
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Journal Article
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices
Bisi, Davide, Chan, Silvia H., Tahhan, Maher, Koksaldi, Onur S., Keller, Stacia, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Mishra, Umesh K.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
A novel device design to lower the on-resistance in GaN trench MOSFETs
Gupta, Chirag, Chan, Silvia H., Enatsu, Yuuki, Agarwal, Anchal, Keller, Stacia, Mishra, Umesh K.
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
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Conference Proceeding
Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition
Chan, Silvia H., Bisi, Davide, Tahhan, Maher, Gupta, Chirag, DenBaars, Steven P., Keller, Stacia, Zanoni, Enrico, Mishra, Umesh K.
Published in Applied physics express (01.04.2018)
Published in Applied physics express (01.04.2018)
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Journal Article
First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
Dong Ji, Gupta, Chirag, Agarwal, Anchal, Chan, Silvia H., Lund, Cory, Wenwen Li, Laurent, Matthew A., Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
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Conference Proceeding
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
Ji, Dong, Gupta, Chirag, Agarwal, Anchal, Chan, Silvia H., Lund, Cory, Li, Wenwen, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti
Published in IEEE electron device letters (01.05.2018)
Published in IEEE electron device letters (01.05.2018)
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Journal Article