Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
Sushkov, A. A., Pavlov, D. A., Andrianov, A. I., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kriukov, R. N., Baidus, N. V., Yurasov, D. V., Rykov, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2022)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2022)
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Journal Article
Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition
Shengurov, V.G., Denisov, S.A., Yu. Chalkov, V., Filatov, D.O., Kudrin, A.V., Sychyov, S.M., Trushin, V.N., Zaitsev, A.V., Titova, A.M., Alyabina, N.A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.09.2020)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.09.2020)
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Journal Article
Structure and surface morphology of GeSn/Si(001) layers grown by HW CVD with co-evaporation of Sn
Zaitsev, A V, Kuz'min, M Yu, Denisov, S A, Shengurov, V G, Chalkov, V Yu, Kudrin, A V, Ved', M V, Filatov, D O
Published in Journal of physics. Conference series (01.03.2020)
Published in Journal of physics. Conference series (01.03.2020)
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Journal Article
Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source
Titova, A. M., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Zaitsev, A. V., Alyabina, N. A., Kudrin, A. V., Zdoroveishev, A. V.
Published in Semiconductors (Woodbury, N.Y.) (2024)
Published in Semiconductors (Woodbury, N.Y.) (2024)
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Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy
Vorontsov, V. A., Antonov, D. A., Kruglov, A. V., Antonov, I. N., Kotomina, V. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Filatov, D. O., Gorshkov, O. N.
Published in Technical physics letters (01.11.2021)
Published in Technical physics letters (01.11.2021)
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Journal Article
Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers
Filatov, D. O., Shenina, M. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kruglov, A. V., Vorontsov, V. A., Pavlov, D. A., Gorshkov, O. N.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2020)
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Journal Article
Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures
Gorshkov, O. N., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Antonov, I. N., Kruglov, A. V., Shenina, M. E., Kotomina, V. E., Filatov, D. O., Serov, D. A.
Published in Technical physics letters (2020)
Published in Technical physics letters (2020)
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Journal Article
On the Influence of Pulsed Gamma-Neutron Irradiation on the Morphology of Self-Assembled GeSi/Si(001) Nanoislands
Ivanova, M. M., Filatov, D. O., Nezhdanov, A. V., Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (2020)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (2020)
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Journal Article
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov, A. A., Pavlov, D. A., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Baidus, N. V., Rykov, A. V., Kryukov, R. N.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
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Journal Article
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov, D. S., Shengurov, V. G., Denisov, S. A., Filatov, D. O., Zdoroveishev, A. V., Chalkov, V. Yu, Zaitsev, A. V., Ved’, M. V., Dorokhin, M. V., Baidakova, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
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Journal Article
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Filatov, D. O., Guseinov, D. V., Chalkov, V. Yu, Denisov, S. A., Shengurov, V. G.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2018)
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Journal Article
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers
Ivanova, M. M., Kachemtsev, A. N., Mikhaylov, A. N., Filatov, D. O., Gorshkov, A. P., Volkova, N. S., Chalkov, V. Yu, Shengurov, V. G.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
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Journal Article
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy
Filatov, D. O., Kazantseva, I. A., Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Gorshkov, A. P., Mishkin, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
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Journal Article
Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Matveev, S. A., Nezhdanov, A. V., Mashin, A. I., Filatov, D. O., Stepikhova, M. V., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2016)
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Journal Article
Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy
Denisov, S. A., Chalkov, V. Yu, Shengurov, V. G., Svetlov, S. P., Pavlov, D. A., Pitirimova, E. A.
Published in Inorganic materials (01.07.2010)
Published in Inorganic materials (01.07.2010)
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Journal Article
Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies
Stepikhova, M.V., Krasil’nikova, L.V., Krasil’nik, Z.F., Shengurov, V.G., Chalkov, V.Yu, Svetlov, S.P., Zhigunov, D.M., Timoshenko, V.Yu, Kashkarov, P.K.
Published in Journal of crystal growth (02.02.2006)
Published in Journal of crystal growth (02.02.2006)
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