Search Results - "Chagarov, Evgueni A." :: K.UTB vyhledávací portál

Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

by Kaufman-Osborn, Tobin, Chagarov, Evgueni A., Park, Sang Wook, Sahu, Bhagawan, Siddiqui, Shariq, Kummel, Andrew C.
Published in Surface science (01.12.2014)

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Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

by CHAGAROV, Evgueni A, KUMMEL, Andrew C
Published in Surface science (01.11.2009)

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Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

by Clemens, Jonathon B, Chagarov, Evgueni A, Holland, Martin, Droopad, Ravi, Shen, Jian, Kummel, Andrew C
Published in The Journal of chemical physics (21.10.2010)

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Atomic imaging and modeling of H2O2(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface

by Kaufman-Osborn, Tobin, Chagarov, Evgueni A, Kummel, Andrew C
Published in The Journal of chemical physics (28.05.2014)

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Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2)

by Chagarov, Evgueni A, Kummel, Andrew C
Published in The Journal of chemical physics (28.12.2011)

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Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

by Shen, Jian, Chagarov, Evgueni A, Feldwinn, Darby L, Melitz, Wilhelm, Santagata, Nancy M, Kummel, Andrew C, Droopad, Ravi, Passlack, Matthias
Published in The Journal of chemical physics (28.10.2010)

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Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

by JIAN SHEN, CLEMENS, Jonathon B, CHAGAROV, Evgueni A, FELDWINN, Darby L, MELITZ, Wilhelm, TAO SONG, BISHOP, Sarah R, KUMMEL, Andrew C, DROOPAD, Ravi
Published in Surface science (01.09.2010)

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Formation mechanisms of polar and non-polar amorphous oxide–semiconductor interfaces

by Chagarov, Evgueni A., Kummel, Andrew C.
Published in Surface science (01.07.2008)

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Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

by Chagarov, Evgueni A., Kavrik, Mahmut S., Fang, Ziwei, Tsai, Wilman, Kummel, Andrew C.
Published in Applied surface science (15.06.2018)

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Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H sub(2)O sub(2)(g) and trimethylaluminum dosing

by Kaufman-Osborn, Tobin, Chagarov, Evgueni A, Park, Sang Wook, Sahu, Bhagawan, Siddiqui, Shariq, Kummel, Andrew C
Published in Surface science (01.12.2014)

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Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al(2)O(3)/semiconductor interface for a-Al(2)O(3)/Ge, a-Al(2)O(3)/InGaAs, and a-Al(2)O(3)/InAlAs/InGaAs

by Chagarov, Evgueni A, Kummel, Andrew C
Published in Surface science (01.11.2009)

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Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al sub(2)O sub(3)/semiconductor interface for a-Al sub(2)O sub(3)/Ge, a-Al sub(2)O sub(3)/InGaAs, and a-Al sub(2)O sub(3)/InAlAs/InGaAs

by Chagarov, Evgueni A, Kummel, Andrew C
Published in Surface science (01.11.2009)

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Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al 2O 3/semiconductor interface for a-Al 2O 3/Ge, a-Al 2O 3/InGaAs, and a-Al 2O 3/InAlAs/InGaAs

by Chagarov, Evgueni A., Kummel, Andrew C.
Published in Surface science (2009)

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Surface Science Letters: Formation mechanisms of polar and non-polar amorphous oxide-semiconductor interfaces

by Chagarov, Evgueni A, Kummel, Andrew C
Published in Surface science (01.07.2008)

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Generation of Realistic Amorphous Al2O3 And ZrO2 Samples By Hybrid Classical and First-Principle Molecular Dynamics Simulations

by Chagarov, Evgueni, Kummel, Andrew C.
Published in ECS transactions (03.10.2008)

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Structural and electronic properties of group III Rich In sub(0.53)Ga sub(0.47)As(001)

by Shen, Jian, Clemens, Jonathon B, Chagarov, Evgueni A, Feldwinn, Darby L, Melitz, Wilhelm, TaoSong, TaoSong, Bishop, Sarah R, Kummel, Andrew C, Droopad, Ravi
Published in Surface science (01.09.2010)

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Structural and electronic properties of group III Rich In 0.53Ga 0.47As(001)

by Shen, Jian, Clemens, Jonathon B., Chagarov, Evgueni A., Feldwinn, Darby L., Melitz, Wilhelm, Song, Tao, Bishop, Sarah R., Kummel, Andrew C., Droopad, Ravi
Published in Surface science (2010)

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Ab initio molecular dynamics simulations of properties of a-Al2O3/vacuum and a-ZrO2/vacuum vs a-Al2O3Ge(100)(2 x 1) and a-ZrO2Ge(100)(2 x 1) interfaces

by Chagarov, Evgueni A, Kummel, Andrew C
Published in The Journal of chemical physics (28.03.2009)

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Theoretical analysis of initial adsorption of high-κ metal oxides on In(x)Ga(1-x)As(0 0 1)-(4×2) surfaces

by Bishop, Sarah R, Clemens, Jonathon B, Chagarov, Evgueni A, Shen, Jian, Kummel, Andrew C
Published in The Journal of chemical physics (21.11.2010)

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Passivation and Nucleation of InGaAs and Ge by ALD Precursors

by Clemens, Jonathan B., Melitz, Wilhelm, Lee, Joon S., Kaufman-Osborn, Tobin, Shen, Jian, Chagarov, Evgueni A., Droopad, Ravi, Kummel, Andrew C.
Published in Meeting abstracts (Electrochemical Society) (01.03.2011)

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