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Published in IEEE electron device letters (01.03.2012)
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AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 \mu\hbox/\mu\hbox at 0.5 V
Rui Li, Yeqing Lu, Guangle Zhou, Qingmin Liu, Soo Doo Chae, Vasen, T., Wan Sik Hwang, Qin Zhang, Fay, P., Kosel, T., Wistey, M., Huili Xing, Seabaugh, A.
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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