High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs
Nguyen, Van Cuong, Cha, Ho-Young, Kim, Hyungtak
Published in Sensors (Basel, Switzerland) (26.03.2023)
Published in Sensors (Basel, Switzerland) (26.03.2023)
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Journal Article
β‐(Al0.17Ga0.83)2O3/Ga2O3 Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis
Atmaca, Gökhan, Cha, Ho-Young
Published in Physica status solidi. A, Applications and materials science (01.06.2022)
Published in Physica status solidi. A, Applications and materials science (01.06.2022)
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Journal Article
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
Kim, Hyun-Seop, Han, Sang-Woo, Jang, Won-Ho, Cho, Chun-Hyung, Seo, Kwang-Seok, Oh, Jungwoo, Cha, Ho-Young
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article
Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process
Yang, Yeo-Reum, Yim, Jun-Hyeok, Kim, Hyun-Seop, Cha, Ho-Young
Published in Materials science in semiconductor processing (15.08.2024)
Published in Materials science in semiconductor processing (15.08.2024)
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Journal Article
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
Kim, Hyun-Seop, Kang, Myoung-Jin, Kim, Jeong Jin, Seo, Kwang-Seok, Cha, Ho-Young
Published in Materials (27.03.2020)
Published in Materials (27.03.2020)
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Journal Article
The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
Choi, Young Chul, Pophristic, Milan, Cha, Ho-Young, Peres, Boris, Spencer, Michael G., Eastman, Lester F.
Published in IEEE transactions on electron devices (01.12.2006)
Published in IEEE transactions on electron devices (01.12.2006)
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Journal Article
Special issue on next‐gen AI and quantum technology
Kim, Ji‐Hoon, Cha, Ho‐Young, Kwon, Daewoong, Choi, Gyu Sang, Kim, HeeSeok, Kang, Yousung
Published in ETRI journal (01.10.2024)
Published in ETRI journal (01.10.2024)
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Journal Article
Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode
LEE, Jae-Gil, PARK, Bong-Ryeol, CHO, Chun-Hyung, SEO, Kwang-Seok, CHA, Ho-Young
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
Seo, Seung Gi, Han, Sang-Woo, Cha, Ho-Young, Yang, Sunggu, Jin, Sung Hun
Published in IEEE electron device letters (01.01.2019)
Published in IEEE electron device letters (01.01.2019)
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Journal Article
Impact Ionization Coefficients in 4H-SiC
Loh, W.S., Ng, B.K., Ng, J.S., Soloviev, S.I., Ho-Young Cha, Sandvik, P.M., Johnson, C.M., David, J.P.R.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency
Handin Liu, Mcintosh, D., Xiaogang Bai, Huapu Pan, Mingguo Liu, Campbell, J.C., Ho Young Cha
Published in IEEE photonics technology letters (15.09.2008)
Published in IEEE photonics technology letters (15.09.2008)
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Journal Article
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Hwang, Il-Hwan, Kang, Myoung-Jin, Cha, Ho-Young, Seo, Kwang-Seok
Published in Crystals (Basel) (01.04.2021)
Published in Crystals (Basel) (01.04.2021)
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Journal Article