Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
Gámiz, F., Cartujo-Cassinello, P., Roldán, J. B., Jiménez-Molinos, F.
Published in Journal of applied physics (01.07.2002)
Published in Journal of applied physics (01.07.2002)
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Journal Article
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., López-Villanueva, J. A., Cartujo, P.
Published in Journal of applied physics (01.02.2001)
Published in Journal of applied physics (01.02.2001)
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Journal Article
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
Lopez-Villanueva, J.A., Cartujo-Cassinello, P., Gamiz, F., Banqueri, J., Palma, A.J.
Published in IEEE transactions on electron devices (01.01.2000)
Published in IEEE transactions on electron devices (01.01.2000)
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Journal Article
Strained-Si on Si1-xGex MOSFET mobility model
Roldan, J.B, Gamiz, F, Cartujo-Cassinello, P, Cartujo, P, Carceller, J.E, Roldan, A
Published in IEEE transactions on electron devices (01.05.2003)
Published in IEEE transactions on electron devices (01.05.2003)
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Journal Article
Monte Carlo simulation of electron mobility in silicon-on-insulator structures
Gámiz, F, Roldán, J.B, López-Villanueva, J.A, Cartujo-Cassinello, P, Jiménez-Molinos, F
Published in Solid-state electronics (01.11.2002)
Published in Solid-state electronics (01.11.2002)
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Journal Article
Electron transport in silicon-on-insulator devices
Gámiz, F, Roldán, J.B, López-Villanueva, J.A, Cartujo-Cassinello, P, Carceller, J.E, Cartujo, P, Jiménez-Molinos, F
Published in Solid-state electronics (01.05.2001)
Published in Solid-state electronics (01.05.2001)
Get full text
Journal Article