Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures
de Souza, Michelly, Cerdeira, Antonio, Estrada, Magali, Cassé, Mikaël, Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.
Published in Solid-state electronics (01.04.2024)
Published in Solid-state electronics (01.04.2024)
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Journal Article
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures
de Souza, Michelly, Cerdeira, Antonio, Estrada, Magali, Cassé, Mikaël, Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.
Published in Solid-state electronics (01.10.2023)
Published in Solid-state electronics (01.10.2023)
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Journal Article
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications
Cardoso Paz, Bruna, Casse, Mikael, Theodorou, Christoforos, Ghibaudo, Gerard, Kammler, Thorsten, Pirro, Luca, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
Published in IEEE transactions on electron devices (01.11.2020)
Published in IEEE transactions on electron devices (01.11.2020)
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Journal Article
(Invited) Cryogenic Electronics for Quantum Computing ICs: What Can Bring FDSOI
Casse, Mikael, Cardoso Paz, Bruna, Bergamaschi, Flavio, Ghibaudo, Gérard, Balestra, Francis, Vinet, Maud
Published in ECS transactions (19.05.2023)
Published in ECS transactions (19.05.2023)
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Journal Article
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors
da Silva, Lucas Mota Barbosa, Pavanello, Marcelo Antonio, Cassé, Mikaël, Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, de Souza, Michelly
Published in Solid-state electronics (01.10.2023)
Published in Solid-state electronics (01.10.2023)
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Journal Article
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
Paz, Bruna Cardoso, Cassé, Mikaël, Haendler, Sebastien, Juge, Andre, Vincent, Emmanuel, Galy, Philippe, Arnaud, Franck, Ghibaudo, Gérard, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
Published in Solid-state electronics (01.12.2021)
Published in Solid-state electronics (01.12.2021)
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Journal Article
Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures
Bergamaschi, Flavio Enrico, Frutuoso, Tadeu Mota, Paz, Bruna Cardoso, Billiot, Gerard, Jansen, Aloysius G. M., Galy, Phillipe, Vincent, Emmanuel, Gaillard, Fred, Duriez, Blandine, Casse, Mikael
Published in IEEE transactions on electron devices (01.04.2024)
Published in IEEE transactions on electron devices (01.04.2024)
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Journal Article
Study of threshold voltage extraction from room temperature down to 4.2 K on 28 nm FD-SOI CMOS technology
Berlingard, Quentin, Lugo-Alvarez, Jose, Bawedin, Maryline, Contamin, Lauriane, Galy, Philippe, De Franceschi, Silvano, Meunier, Tristan, Vinet, Maud, Gaillard, Fred, Cassé, Mikaël
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs
de Souza, Michelly, Cerdeira, Antonio, Estrada, Magali, Barraud, Sylvain, Casse, Mikael, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo Antonio
Published in IEEE journal of the Electron Devices Society (01.01.2023)
Published in IEEE journal of the Electron Devices Society (01.01.2023)
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Journal Article
Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
Paz, Bruna Cardoso, Cassé, Mikaël, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo Antonio
Published in Solid-state electronics (01.09.2019)
Published in Solid-state electronics (01.09.2019)
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Journal Article
FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement Introducing Low-Field Quantum Mechanical Correction
Bedecarrats, Thomas, Triozon, Francois, Martinie, Sebastien, Casse, Mikael, Rozeau, Olivier
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
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Conference Proceeding
Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature
Catapano, Edoardo, Ghibaudo, Gerard, Casse, Mikael, Frutuoso, Tadeu Mota, Paz, Bruna Cardoso, Bedecarrats, Thomas, Apra, Agostino, Gaillard, Fred, De Franceschi, Silvano, Meunier, Tristan, Vinet, Maud
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
Methodology to separate channel conductions of two level vertically stacked SOI nanowire MOSFETs
Paz, Bruna Cardoso, Cassé, Mikaël, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo Antonio
Published in Solid-state electronics (01.11.2018)
Published in Solid-state electronics (01.11.2018)
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Journal Article
Electrical characterization of vertically stacked p-FET SOI nanowires
Cardoso Paz, Bruna, Cassé, Mikaël, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier, Antonio Pavanello, Marcelo
Published in Solid-state electronics (01.03.2018)
Published in Solid-state electronics (01.03.2018)
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Journal Article
Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters
CASSE, Mikaël, THEVENOD, Laurent, BILLON, Thierry, MOUIS, Mireille, BOULANGER, Fabien, GUILLAUMOT, Bernard, TOSTI, Lucie, MARTIN, Francois, MITARD, Jérome, WEBER, Olivier, ANDRIEU, Francois, ERNST, Thomas, REIMBOLD, Gilles
Published in IEEE transactions on electron devices (01.04.2006)
Published in IEEE transactions on electron devices (01.04.2006)
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Journal Article
Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width
Coquand, R., Casse, M., Barraud, S., Cooper, D., Maffini-Alvaro, V., Samson, M., Monfray, S., Boeuf, F., Ghibaudo, G., Faynot, O., Poiroux, T.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
Ghibaudo, G., Aouad, M., Casse, M., Martinie, S., Poiroux, T., Balestra, F.
Published in Solid-state electronics (01.08.2020)
Published in Solid-state electronics (01.08.2020)
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Journal Article
Cryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
Paz, Bruna Cardoso, Pavanello, Marcelo Antonio, Casse, Mikael, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier
Published in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (01.03.2018)
Published in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (01.03.2018)
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Conference Proceeding
Experimental Investigation of Hole Transport in Strained Si1―xGex/SOI pMOSFETs: Part II—Mobility and High-Field Transport in Nanoscaled PMOS
CASSE, Mikaël, HUTIN, Louis, LE ROYER, Cyrille, COOPER, David, HARTMANN, Jean-Michel, REIMBOLD, Gilles
Published in IEEE transactions on electron devices (01.03.2012)
Published in IEEE transactions on electron devices (01.03.2012)
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Journal Article
Experimental Investigation of the Tunneling Injection Boosters for Enhanced ION ETSOI Tunnel FET
VILLALON, Anthony, LE ROYER, Cyrille, CASSE, Mikaël, COOPER, David, HARTMANN, Jean-Michel, ALLAIN, Fabienne, TABONE, Claude, ANDRIEU, François, CRISTOLOVEANU, Sorin
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article