High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
Jenny, J. R., Müller, St G., Powell, A., Tsvetkov, V. F., Hobgood, H. M., Glass, R. C., Carter, C. H.
Published in Journal of electronic materials (01.05.2002)
Published in Journal of electronic materials (01.05.2002)
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SiC Seeded Crystal Growth
Glass, R. C., Henshall, D., Tsvetkov, V. F., Carter Jr, C. H.
Published in physica status solidi (b) (01.07.1997)
Published in physica status solidi (b) (01.07.1997)
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White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
Dudley, M, Wang, Shaoping, Huang, Wei, Jr, C H Carter, Tsvetkov, V F, Fazi, C
Published in Journal of physics. D, Applied physics (14.04.1995)
Published in Journal of physics. D, Applied physics (14.04.1995)
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Conference Proceeding
Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective
Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.
Published in Superlattices and microstructures (01.10.2006)
Published in Superlattices and microstructures (01.10.2006)
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Scanning Tunneling Microscopy with a Large-Gap Semiconductor Tip
Packard, W. E, Dow, J. D, Rohrer, H, Palmour, J. W, Jr., C. H. Carter, Nicolaides, R
Published in Europhysics letters (10.04.1994)
Published in Europhysics letters (10.04.1994)
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