Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With HfO2/TiN Gate Stacks
KERBER, Andreas, MAITRA, Kingsuk, MAJUMDAR, Amlan, HARGROVE, Mike, CARTIER, Eduard Albert
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials
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Published in ECS transactions (09.04.2018)
Published in ECS transactions (09.04.2018)
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DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
THEES, Hans-Jürgen, MULFINGER, George Robert, SPORER, Ryan, BAARS, Peter, CARTER, Rick J, HÖNTSCHEL, Jan
Year of Publication 12.03.2020
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Year of Publication 12.03.2020
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Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Mulfinger, George Robert, Thees, Hans-Jürgen, Sporer, Ryan, Carter, Rick J, Baars, Peter, Höntschel, Jan
Year of Publication 31.12.2019
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Year of Publication 31.12.2019
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(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials
Carter, Rick J, Sporer, Ryan, Triyoso, Dina H, Child, Amy, Mulfinger, George Robert, Wahl, Jeremy A, Mcardle, Timothy J, Kluth, George J, Fronheiser, Jody, Holt, Judson Robert, Punchihewa, Kasun, Vanamurthy, Laks, Beasor, Scott, Rana, Uzma, Sohn, D K
Published in Meeting abstracts (Electrochemical Society) (13.04.2018)
Published in Meeting abstracts (Electrochemical Society) (13.04.2018)
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DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
MULFINGER George Robert, THEES Hans-Jürgen, HÖNTSCHEL Jan, CARTER Rick J, SPORER Ryan, BAARS Peter
Year of Publication 11.01.2018
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Year of Publication 11.01.2018
Patent
DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI
MULFINGER George Robert, THEES Hans-Jürgen, HÖNTSCHEL Jan, CARTER Rick J, SPORER Ryan, BAARS Peter
Year of Publication 16.11.2017
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Year of Publication 16.11.2017
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
Thees Hans-Jürgen, Carter Rick J, Höntschel Jan, Sporer Ryan, Mulfinger George Robert, Baars Peter
Year of Publication 31.10.2017
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Year of Publication 31.10.2017
Patent
Differential sg/eg spacer integration with equivalent nfet/pfet spacer widths & dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage eg device on fdsoi
SPORER, RYAN, MULFINGER, GEORGE ROBERT, HOENTSCHEL, JAN, CARTER, RICK J, BAARS, PETER
Year of Publication 11.11.2018
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Year of Publication 11.11.2018
Patent
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths & dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI
SPORER, RYAN, MULFINGER, GEORGE ROBERT, HOENTSCHEL, JAN, CARTER, RICK J, BAARS, PETER, THEES, HANS-JURGEN
Year of Publication 01.03.2018
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Year of Publication 01.03.2018
Patent
Spacer integration methods and resulting devices
PETER BAARS, GEORGE ROBERT MULFINGER, HONTSCHEL JAN, HANS-JURGEN THEES, RYAN SPORER, RICK J. CARTER
Year of Publication 01.12.2017
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Year of Publication 01.12.2017
Patent