Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
Zhang, Wei, Kong, Ji-Zhou, Cao, Zheng-Yi, Li, Ai-Dong, Wang, Lai-Guo, Zhu, Lin, Li, Xin, Cao, Yan-Qiang, Wu, Di
Published in Nanoscale research letters (08.06.2017)
Published in Nanoscale research letters (08.06.2017)
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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
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Published in Nanoscale research letters (19.03.2015)
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Nonvolatile memory capacitors based on Al2O3 tunneling and HfO2 blocking layers with charge storage in atomic-layer-deposited Pt nanocrystals
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Monolayer FePt nanocrystal self-assembly embedded into atomic-layer-deposited Al2O3 films for nonvolatile memory applications
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Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt x Nanocrystals for Resistive Random Access Memory Applications
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Published in ACS applied materials & interfaces (22.02.2017)
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Growth characteristics of Ti-based fumaric acid hybrid thin films by molecular layer depositionElectronic supplementary information (ESI) available. See DOI: 10.1039/c5dt00384a
Cao, Yan-Qiang, Zhu, Lin, Li, Xin, Cao, Zheng-Yi, Wu, Di, Li, Ai-Dong
Year of Publication 11.08.2015
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HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment
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Published in Applied surface science (15.01.2015)
Published in Applied surface science (15.01.2015)
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Journal Article
Bipolar Resistive Switching Characteristics of HfO 2 /TiO 2 /HfO 2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
Zhang, Wei, Kong, Ji-Zhou, Cao, Zheng-Yi, Li, Ai-Dong, Wang, Lai-Guo, Zhu, Lin, Li, Xin, Cao, Yan-Qiang, Wu, Di
Published in Nanoscale research letters (01.12.2017)
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Published in Nanoscale research letters (01.12.2017)
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HfO2/GeO x N y /Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment
Cao, Yan-Qiang, Chen, Jun, Liu, Xiao-Jie, Li, Xin, Cao, Zheng-Yi, Ma, Yuan-Jie, Wu, Di, Li, Ai-Dong
Published in Applied surface science (01.01.2015)
Published in Applied surface science (01.01.2015)
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HfO2/GeO N /Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment
Cao, Yan-Qiang, Chen, Jun, Liu, Xiao-Jie, Li, Xin, Cao, Zheng-Yi, Ma, Yuan-Jie, Wu, Di, Li, Ai-Dong
Published in Applied surface science (01.01.2015)
Published in Applied surface science (01.01.2015)
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Journal Article
Excellent resistive switching properties of atomic layer-deposited Al^sub 2^O3/HfO2/Al^sub 2^O3 trilayer structures for non-volatile memory applications
Wang, Lai-guo, Qian, Xu, Cao, Yan-qiang, Cao, Zheng-yi, Fang, Guo-yong, Li, Ai-dong, Wu, Di
Published in Nanoscale research letters (01.03.2015)
Published in Nanoscale research letters (01.03.2015)
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