Spin Transfer due to Quantum Magnetization Fluctuations
Zholud, Andrei, Freeman, Ryan, Cao, Rongxing, Srivastava, Ajit, Urazhdin, Sergei
Published in Physical review letters (18.12.2017)
Published in Physical review letters (18.12.2017)
Get more information
Journal Article
Effect of soldering time on the microstructure and mechanical properties of SnBi/SACBN/Cu solder joint
Liu, Yang, Chang, Jian, Xue, Yuxiong, Cao, Rongxing, Li, Hongxia, Zheng, Shu, Zeng, Xianghua
Published in Journal of materials science. Materials in electronics (01.04.2022)
Published in Journal of materials science. Materials in electronics (01.04.2022)
Get full text
Journal Article
Plasticity enhancement of nano-Ag sintered joint based on metal foam
Liu, Yang, Li, Zhao, Zhang, Hao, Xue, Yuxiong, Zhou, Min, Cao, Rongxing, Chen, Penghui, Zeng, Xianghua
Published in Journal of materials science. Materials in electronics (01.03.2021)
Published in Journal of materials science. Materials in electronics (01.03.2021)
Get full text
Journal Article
Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs
Cao, Rongxing, Wang, Kejia, Meng, Yang, Li, Linhuan, Zhao, Lin, Han, Dan, Liu, Yang, Zheng, Shu, Li, Hongxia, Jiang, Yuqi, Zeng, Xianghua, Xue, Yuxiong
Published in Chinese physics B (01.05.2023)
Published in Chinese physics B (01.05.2023)
Get full text
Journal Article
Creation and annihilation of artificial magnetic skyrmions with the electric field
Cheng, Jun, Sun, Liang, Zhang, Yike, Ji, Tongzhou, Cao, Rongxing, Miao, Bingfeng, Zhao, Yonggang, Ding, Haifeng
Published in Chinese physics B (01.02.2024)
Published in Chinese physics B (01.02.2024)
Get full text
Journal Article
Deformation mechanism and optimization of high-density organic substrates during reflow soldering
Cao, Rongxing, Qian, Bang, Xue, Yuxiong, Fang, Jiaen, Liu, Yang
Published in Microelectronics and reliability (01.11.2024)
Published in Microelectronics and reliability (01.11.2024)
Get full text
Journal Article
Effect of 2 MeV Electron Irradiation on the Electronic Structure and Photoluminescence of SiC
Chang, Wenjing, Cao, Rongxing, Wang, Kejia, Xue, Yuxiong, Zeng, Xianghua
Published in Journal of electronic materials (01.05.2024)
Published in Journal of electronic materials (01.05.2024)
Get full text
Journal Article
Ni-Mo based metal/oxide heterostructured nanosheets with largely exposed interfacial atoms for overall water-splitting
Zhou, Min, Zeng, Yifeng, Liu, Yang, Sun, Yi, Lu, Fei, Zhang, Xiuyun, Cao, Rongxing, Xue, Yuxiong, Zeng, Xianghua, Wu, Yongping
Published in Applied surface science (30.09.2022)
Published in Applied surface science (30.09.2022)
Get full text
Journal Article
Proton irradiation effects on GaInP/GaAs/Ge triple junction cells
Gao, Chen, Cao, Rongxing, Li, Linhuan, Mei, Bo, Zhang, Hongwei, Lv, He, Xue, Yuxiong, Zeng, Xianghua
Published in Optical materials (01.08.2023)
Published in Optical materials (01.08.2023)
Get full text
Journal Article
Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton
Lu, Yuxin, Cao, Rongxing, Li, Hongxia, Yang, Xuelin, Zeng, Xianghua, Xue, Yuxiong
Published in Physica scripta (01.03.2024)
Published in Physica scripta (01.03.2024)
Get full text
Journal Article
First-principles study on phonon transport properties of MoTe2 and WTe2 monolayers in different phases
Shen, Jinhan, Han, Dan, Zhang, Bowen, Cao, Rongxing, Liu, Yang, Zheng, Shu, Li, Hongxia, Jiang, Yuqi, Xue, Yuxiong, Xue, Mengyun
Published in Physica. E, Low-dimensional systems & nanostructures (01.01.2023)
Published in Physica. E, Low-dimensional systems & nanostructures (01.01.2023)
Get full text
Journal Article
Unveiling the impact of four-phonon scattering on thermal transport properties of the bulk β-Ga2O3 and monolayer Ga2O3
Tu, Hui, Xue, Yuxiong, Cao, Rongxing, Liu, Yang, Zheng, Shu, Li, Hongxia, Guo, Yuting, Sun, Haiyi, Han, Dan
Published in Physica. E, Low-dimensional systems & nanostructures (01.01.2025)
Published in Physica. E, Low-dimensional systems & nanostructures (01.01.2025)
Get full text
Journal Article
Study of the mechanism of single event burnout in lateral depletion-mode Ga2O3 MOSFET devices via TCAD simulation
Wang, Kejia, Wang, Zujun, Cao, Rongxing, Liu, Hanxun, Chang, Wenjing, Zhao, Lin, Mei, Bo, Lv, He, Zeng, Xianghua, Xue, Yuxiong
Published in Journal of applied physics (14.04.2024)
Published in Journal of applied physics (14.04.2024)
Get full text
Journal Article