Elaboration of wide bandgap CIGS on silicon by electrodeposition of stacked metal precursors and sulfur annealing for tandem solar cell applications
Crossay, Alexandre, Cammilleri, Davide, Thomere, Angelica, Zerbo, Bienlo, Rebai, Amelle, Barreau, Nicolas, Lincot, Daniel
Published in EPJ Photovoltaics (2020)
Published in EPJ Photovoltaics (2020)
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Journal Article
Pure sulfide wide gap CIGS on silicon for tandem applications by exploring versatile coevaporation of metallic films and sulfur annealing
Crossay, Alexandre, Gloaguen, Hugo, Cammilleri, Davide, Lontchi, Jackson, Rebai, Amelle, Barreau, Nicolas, Lincot, Daniel
Published in 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) (20.06.2021)
Published in 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) (20.06.2021)
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Conference Proceeding
High efficiency solar cell based on Cu(In,Ga)S2 thin film grown by 3-stage process
Barreau, Nicolas, Thomere, Angelica, Cammilleri, Davide, Crossay, Alexandre, Guillot-Deudon, Catherine, Lafond, Alain, Stephant, Nicolas, Lincot, Daniel, Caldes, M. Teresa, Bodeux, Romain, Berenguier, Baptiste
Published in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (14.06.2020)
Published in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (14.06.2020)
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Conference Proceeding
Conception of a 90-GHz metamaterial-based coupler for astrophysical applications
Sidibe, Alassane, Gadot, Frédérique, Belier, Benoit, Bordier, Guillaume, Cammilleri, Davide, Ghribi, Adnan, Tartari, Andrea, Piat, Michel, Martino, Joseph, Pajot, François, Boussaha, Faouzi
Published in Applied physics. A, Materials science & processing (01.11.2014)
Published in Applied physics. A, Materials science & processing (01.11.2014)
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Journal Article
Selective Epitaxial Growth Of Si And Relaxed Ge By UHV-CVD In Si(001) Windows
Fossard, Frédéric, Halbwax, Mathieu, Yam, Vy, Nguyen, Huu Lam, Mathet, Véronique, Cammilleri, Davide, Débarre, Dominique, Boulmer, Jacques, Bouchier, Daniel
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Kinetics of Selective Epitaxial Growth of Si and Relaxed Ge by Ultrahigh Vacuum Chemical Vapor Deposition in Si(001) Windows
Fossard, Frédéric, HALBWAX, Mathieu, YAM, Vy, Nguyen, Huu Lam, Mathet, Véronique, Cammilleri, Davide, Débarre, Dominique, Boulmer, Jacques, BOUCHIER, Daniel
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)
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Journal Article
METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR OF GERMANIUM ON OXIDISED SILICON, AND METHOD FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT
CAMMILLERI, VINCENZO DAVIDE, RENARD, CHARLES, YAM, VY, FOSSARD, FRÉDÉRIC, BOUCHIER, DANIEL
Year of Publication 16.11.2016
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Year of Publication 16.11.2016
Patent
PROCEDE D'HETERO EPITAXIE LOCALISEE SUR DIELECTRIQUE, EN PARTICULIER DE GERMANIUM SUR SILICIUM OXYDE, ET PROCEDE ET SYSTEME DE REALISATION D'UNE BASE DE FABRICATION DE CIRCUIT INTEGRE HOMOGENE OU HETEROGENE
BOUCHIER DANIEL, RENARD CHARLES, YAM VY, CAMMILLERI VINCENZO DAVIDE, FOSSARD FREDERIC
Year of Publication 08.01.2010
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Year of Publication 08.01.2010
Patent
METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR OF GERMANIUM ON OXIDISED SILICON, AND METHOD FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT
CAMMILLERI, VINCENZO DAVIDE, RENARD, CHARLES, YAM, VY, FOSSARD, FRÉDÉRIC, BOUCHIER, DANIEL
Year of Publication 22.09.2010
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Year of Publication 22.09.2010
Patent
METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR GERMANIUM ON SILICON OXIDE, AND METHOD AND SYSTEM FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT
CAMMILLERI, VINCENZO DAVIDE, FOSSARD, FREDERIC, RENARD, CHARLES, YAM, VY, BOUCHIER, DANIEL
Year of Publication 27.08.2009
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Year of Publication 27.08.2009
Patent
METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR GERMANIUM ON SILICON OXIDE, AND METHOD AND SYSTEM FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT
CAMMILLERI, VINCENZO DAVIDE, FOSSARD, FREDERIC, RENARD, CHARLES, YAM, VY, BOUCHIER, DANIEL
Year of Publication 02.07.2009
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Year of Publication 02.07.2009
Patent
PROCEDE D'HETERO EPITAXIE LOCALISEE SUR DIELECTRIQUE, EN PARTICULIER DE GERMANIUM SUR SILICIUM OXYDE, ET PROCEDE ET SYSTEME DE REALISATION D'UNE BASE DE FABRICATION DE CIRCUIT INTEGRE HOMOGENE OU HETEROGENE
BOUCHIER DANIEL, RENARD CHARLES, YAM VY, CAMMILLERI VINCENZO DAVIDE, FOSSARD FREDERIC
Year of Publication 19.06.2009
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Year of Publication 19.06.2009
Patent