An investigation of the properties of intimate InInxGa1-xAs(100) interfaces formed at room and cryogenic temperatures
Cammack, D.S., McGregor, S.M., McChesney, J.J., Clark, S.A., Dunstan, P.R., Burgess, S.R., Wilks, S.P., Peiró, F., Ferrer, J.-C., Cornet, A., Morante, J.R., Kestle, A., Westwood, D.I., Elliott, M.
Published in Applied surface science (01.01.1998)
Published in Applied surface science (01.01.1998)
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Journal Article
The electronic and structural properties of the silicon-gallium arsenide(110) interface
Dunstan, P.R., Wilks, S.P., Burgess, S.R., Pan, M., Williams, R.H., Cammack, D.S., Clark, S.A.
Published in Applied surface science (01.01.1998)
Published in Applied surface science (01.01.1998)
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Journal Article
Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets
Pan, M., Wilks, S.P., Dunstan, P.R., Pritchard, M., Williams, R.H., Cammack, D.S., Clark, S.A.
Published in Thin solid films (1999)
Published in Thin solid films (1999)
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Journal Article