Density control of GaN quantum dots on AlN single crystal
Tamariz, Sebastian, Callsen, Gordon, Grandjean, Nicolas
Published in Applied physics letters (25.02.2019)
Published in Applied physics letters (25.02.2019)
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Journal Article
Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
Butté, Raphaël, Lahourcade, Lise, Uždavinys, Tomas Kristijonas, Callsen, Gordon, Mensi, Mounir, Glauser, Marlene, Rossbach, Georg, Martin, Denis, Carlin, Jean-François, Marcinkevičius, Saulius, Grandjean, Nicolas
Published in Applied physics letters (15.01.2018)
Published in Applied physics letters (15.01.2018)
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Journal Article
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Tamariz, Sebastian, Callsen, Gordon, Stachurski, Johann, Shojiki, Kanako, Butté, Raphaël, Grandjean, Nicolas
Published in ACS photonics (17.06.2020)
Published in ACS photonics (17.06.2020)
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Journal Article
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities
Jagsch, Stefan T., Triviño, Noelia Vico, Lohof, Frederik, Callsen, Gordon, Kalinowski, Stefan, Rousseau, Ian M., Barzel, Roy, Carlin, Jean-François, Jahnke, Frank, Butté, Raphaël, Gies, Christopher, Hoffmann, Axel, Grandjean, Nicolas, Reitzenstein, Stephan
Published in Nature communications (08.02.2018)
Published in Nature communications (08.02.2018)
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Journal Article
Manifestation of unconventional biexciton states in quantum dots
Hönig, Gerald, Callsen, Gordon, Schliwa, Andrei, Kalinowski, Stefan, Kindel, Christian, Kako, Satoshi, Arakawa, Yasuhiko, Bimberg, Dieter, Hoffmann, Axel
Published in Nature communications (16.12.2014)
Published in Nature communications (16.12.2014)
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Journal Article
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy
Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Near-UV narrow bandwidth optical gain in lattice-matched III-nitride waveguides
Ciers, Joachim, Jacopin, Gwénolé, Callsen, Gordon, Bougerol, Catherine, Carlin, Jean-François, Butté, Raphaël, Grandjean, Nicolas
Published in Japanese Journal of Applied Physics (01.09.2018)
Published in Japanese Journal of Applied Physics (01.09.2018)
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Journal Article
Free‐Standing ZnSe‐Based Microdisk Resonators: Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry
Seemann, Wilken, Kothe, Alexander, Tessarek, Christian, Schmidt, Gesa, Qiao, Siqi, von den Driesch, Nils, Wiersig, Jan, Pawlis, Alexander, Callsen, Gordon, Gutowski, Jürgen
Published in physica status solidi (b) (01.11.2021)
Published in physica status solidi (b) (01.11.2021)
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Journal Article
Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy
Siche, Dietmar, Zwierz, Radoslaw, Kachel, Krzysztof, Jankowski, Nadja, Nenstiel, Christian, Callsen, Gordon, Bickermann, Matthias, Hoffmann, Axel
Published in Crystal research and technology (1979) (01.08.2017)
Published in Crystal research and technology (1979) (01.08.2017)
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Journal Article
Optical emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template
Müßener, Jan, Greif, Ludwig A. Th, Kalinowski, Stefan, Callsen, Gordon, Hille, Pascal, Schörmann, Jörg, Wagner, Markus R, Schliwa, Andrei, Martí-Sánchez, Sara, Arbiol, Jordi, Hoffmann, Axel, Eickhoff, Martin
Published in Nanoscale (28.03.2018)
Published in Nanoscale (28.03.2018)
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Journal Article
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
Bryan, Zachary, Hoffmann, Marc, Tweedie, James, Kirste, Ronny, Callsen, Gordon, Bryan, Isaac, Rice, Anthony, Bobea, Milena, Mita, Seiji, Xie, Jinqiao, Sitar, Zlatko, Collazo, Ramón
Published in Journal of electronic materials (01.05.2013)
Published in Journal of electronic materials (01.05.2013)
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Journal Article
Conference Proceeding
Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al 0.25 Ga 0.75 N double quantum well grown by molecular beam epitaxy
Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al sub(0.25) Ga sub(0.75) N double quantum well grown by molecular beam epitaxy
Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
Alden, Dorian, Bryan, Zachary, Gaddy, Benjamin, Bryan, Isaac, Callsen, Gordon, Koukitu, Akinori, Kumagai, Yoshinao, Hoffmann, Axel, Irving, Doug, Sitar, Zlatko, Collazo, Ramon
Published in ECS transactions (25.04.2016)
Published in ECS transactions (25.04.2016)
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