Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample
Hocker, Matthias, Maier, Pascal, Tischer, Ingo, Meisch, Tobias, Caliebe, Marian, Scholz, Ferdinand, Mundszinger, Manuel, Kaiser, Ute, Thonke, Klaus
Published in Journal of applied physics (21.02.2017)
Published in Journal of applied physics (21.02.2017)
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Journal Article
Semipolar (112-2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates
Dinh, Duc V., Akhter, Mahbub, Presa, Silvino, Kozlowski, Grzegorz, O'Mahony, Donagh, Maaskant, Pleun P., Brunner, Frank, Caliebe, Marian, Weyers, Markus, Scholz, Ferdinand, Corbett, Brian, Parbrook, Peter J.
Published in Physica status solidi. A, Applications and materials science (01.10.2015)
Published in Physica status solidi. A, Applications and materials science (01.10.2015)
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Journal Article
High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes
Zhiheng Quan, Dinh, Duc V., Presa, Silvino, Roycroft, Brendan, Foley, Ann, Akhter, Mahbub, O'Mahony, Donagh, Maaskant, Pleun P., Caliebe, Marian, Scholz, Ferdinand, Parbrook, Peter J., Corbett, Brian
Published in IEEE photonics journal (01.10.2016)
Published in IEEE photonics journal (01.10.2016)
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Journal Article
Growth and coalescence studies of (112‾2) oriented GaN on pre-structured sapphire substrates using marker layers
Caliebe, Marian, Han, Yisong, Hocker, Matthias, Meisch, Tobias, Humphreys, Colin, Thonke, Klaus, Scholz, Ferdinand
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
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Journal Article
Toward defect-free semi-polar GaN templates on pre-structured sapphire
Han, Yisong, Caliebe, Marian, Hage, Fredrik, Ramasse, Quentin, Pristovsek, Markus, Zhu, Tongtong, Scholz, Ferdinand, Humphreys, Colin
Published in Physica Status Solidi. B: Basic Solid State Physics (01.05.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.05.2016)
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Journal Article
Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN
Bauer, Sondes, Lazarev, Sergey, Bauer, Martin, Meisch, Tobias, Caliebe, Marian, Holý, Václav, Scholz, Ferdinand, Baumbach, Tilo
Published in Journal of applied crystallography (01.08.2015)
Published in Journal of applied crystallography (01.08.2015)
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Journal Article
Toward defect-free semi-polar GaN templates on pre-structured sapphire (Phys. Status Solidi B 5/2016)
Han, Yisong, Caliebe, Marian, Hage, Fredrik, Ramasse, Quentin, Pristovsek, Markus, Zhu, Tongtong, Scholz, Ferdinand, Humphreys, Colin
Published in physica status solidi (b) (01.05.2016)
Published in physica status solidi (b) (01.05.2016)
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Journal Article
Improvements of MOVPE grown (11$ bar 2 $2) oriented GaN on pre-structured sapphire substrates using a SiNx interlayer and HVPE overgrowth
Caliebe, Marian, Meisch, Tobias, Neuschl, Benjamin, Bauer, Sebastian, Helbing, Jeffrey, Beck, Dominik, Thonke, Klaus, Klein, Martin, Heinz, Dominik, Scholz, Ferdinand
Published in Physica status solidi. C (01.04.2014)
Published in Physica status solidi. C (01.04.2014)
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Journal Article
Semipolar GaN-based heterostructures on foreign substrates
Scholz, Ferdinand, Caliebe, Marian, Gahramanova, Gulnaz, Heinz, Dominik, Klein, Martin, Leute, Robert A. R., Meisch, Tobias, Wang, Junjun, Hocker, Matthias, Thonke, Klaus
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
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Journal Article
Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates
Caliebe, Marian, Tandukar, Sushil, Cheng, Zongzhe, Hocker, Matthias, Han, Yisong, Meisch, Tobias, Heinz, Dominik, Huber, Florian, Bauer, Sebastian, Plettl, Alfred, Humphreys, Colin, Thonke, Klaus, Scholz, Ferdinand
Published in Journal of crystal growth (15.04.2016)
Published in Journal of crystal growth (15.04.2016)
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Journal Article
Semipolar GaN-based heterostructures on foreign substrates (Phys. Status Solidi B 1/2016)
Scholz, Ferdinand, Caliebe, Marian, Gahramanova, Gulnaz, Heinz, Dominik, Klein, Martin, Leute, Robert A. R., Meisch, Tobias, Wang, Junjun, Hocker, Matthias, Thonke, Klaus
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.01.2016)
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Journal Article
Improvements of MOVPE grown (11$ \bar 2 $2) oriented GaN on pre‐structured sapphire substrates using a SiN x interlayer and HVPE overgrowth
Caliebe, Marian, Meisch, Tobias, Neuschl, Benjamin, Bauer, Sebastian, Helbing, Jeffrey, Beck, Dominik, Thonke, Klaus, Klein, Martin, Heinz, Dominik, Scholz, Ferdinand
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Improvements of MOVPE grown (11 $ \bar 2 $ 2) oriented GaN on pre-structured sapphire substrates using a SiN sub(x) interlayer and HVPE overgrowth
Caliebe, Marian, Meisch, Tobias, Neuschl, Benjamin, Bauer, Sebastian, Helbing, Jeffrey, Beck, Dominik, Thonke, Klaus, Klein, Martin, Heinz, Dominik, Scholz, Ferdinand
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
(Invited) Large Area Semipolar GaN Grown on Foreign Substrates
Scholz, Ferdinand, Caliebe, Marian, Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Hocker, Matthias, Neuschl, Benjamin, Tischer, Ingo, Thonke, Klaus
Published in ECS transactions (20.03.2014)
Published in ECS transactions (20.03.2014)
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Journal Article
(Invited) Large Area Semipolar GaN Grown on Foreign Substrates
Scholz, Ferdinand, Caliebe, Marian, Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Hocker, Matthias, Neuschl, Benjamin, Tischer, Ingo, Thonke, Klaus
Published in Meeting abstracts (Electrochemical Society) (01.04.2014)
Published in Meeting abstracts (Electrochemical Society) (01.04.2014)
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