High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006)
Lin, Jia-Yong, Pei, Yan-Li, Zhuo, Yi, Chen, Zi-Min, Hu, Rui-Qin, Cai, Guang-Shuo, Wang, Gang
Published in Chinese physics B (01.11.2016)
Published in Chinese physics B (01.11.2016)
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