Relaxed silicon-germanium on insulator substrate by layer transfer
ZHIYUAN CHENG, TARASCHI, Gianni, CURRIE, Matthew T, LEITZ, Chris W, LEE, Minjoo L, PITERA, Arthur, LANGDO, Thomas A, HOYT, Judy L, ANTONIADIS, Dimitri A, FITZGERALD, Eugene A
Published in Journal of electronic materials (01.12.2001)
Published in Journal of electronic materials (01.12.2001)
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Scalability of strained-Si nMOSFETs down to 25 nm gate length
Jung-Suk Goo, Qi Xiang, Takamura, Y., Haihong Wang, Pan, J., Arasnia, F., Paton, E.N., Besser, P., Sidorov, M.V., Adem, E., Lochtefeld, A., Braithwaite, G., Currie, M.T., Hammond, R., Bulsara, M.T., Ming-Ren Lin
Published in IEEE electron device letters (01.05.2003)
Published in IEEE electron device letters (01.05.2003)
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