Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
Delabie, A, Caymax, M, Groven, B, Heyne, M, Haesevoets, K, Meersschaut, J, Nuytten, T, Bender, H, Conard, T, Verdonck, P, Van Elshocht, S, De Gendt, S, Heyns, M, Barla, K, Radu, I, Thean, A
Published in Chemical communications (Cambridge, England) (07.11.2015)
Published in Chemical communications (Cambridge, England) (07.11.2015)
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Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching
Weyher, J. L, van Dorp, D. H, Conard, T, Nowak, G, Levchenko, I, Kelly, J. J
Published in Journal of physical chemistry. C (20.01.2022)
Published in Journal of physical chemistry. C (20.01.2022)
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MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates
El Kazzi, S., Mortelmans, W., Nuytten, T., Meersschaut, J., Carolan, P., Landeloos, L., Conard, T., Radu, I., Heyns, M., Merckling, C.
Published in Journal of applied physics (07.04.2018)
Published in Journal of applied physics (07.04.2018)
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The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
Martens, K., Radu, I. P., Mertens, S., Shi, X., Nyns, L., Cosemans, S., Favia, P., Bender, H., Conard, T., Schaekers, M., De Gendt, S., Afanas'ev, V., Kittl, J. A., Heyns, M., Jurczak, M.
Published in Journal of applied physics (15.12.2012)
Published in Journal of applied physics (15.12.2012)
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Influence of thickness scaling on the electronic structure and optical properties of oxygen deficient BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) substrate
Ahmed, I., Korytov, M., Sergeant, S., Nuytten, T., Conard, T., De Gendt, S., Merckling, C.
Published in APL materials (01.03.2024)
Published in APL materials (01.03.2024)
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Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy
Liu, Enlong, Swerts, J., Devolder, T., Couet, S., Mertens, S., Lin, T., Spampinato, V., Franquet, A., Conard, T., Van Elshocht, S., Furnemont, A., De Boeck, J., Kar, G.
Published in Journal of applied physics (28.01.2017)
Published in Journal of applied physics (28.01.2017)
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Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
Green, M. L., Ho, M.-Y., Busch, B., Wilk, G. D., Sorsch, T., Conard, T., Brijs, B., Vandervorst, W., Räisänen, P. I., Muller, D., Bude, M., Grazul, J.
Published in Journal of applied physics (15.12.2002)
Published in Journal of applied physics (15.12.2002)
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Design of Mixed PEO/PAA Brushes with Switchable Properties Toward Protein Adsorption
Delcroix, M. F, Huet, G. L, Conard, T, Demoustier-Champagne, S, Du Prez, F. E, Landoulsi, J, Dupont-Gillain, C. C
Published in Biomacromolecules (14.01.2013)
Published in Biomacromolecules (14.01.2013)
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Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation
Arimura, H., Dekkers, H., Ragnarsson, L.-A., Mitard, J., De Heyn, V., Mocuta, D., Collaert, N., Horiguchi, N., Cott, D., Boccardi, G., Loo, R., Wostyn, K., Witters, L., Conard, T., Suhard, S., van Dorp, D.
Published in IEEE transactions on electron devices (01.12.2019)
Published in IEEE transactions on electron devices (01.12.2019)
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High- k dielectrics for future generation memory devices (Invited Paper)
Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Direct imaging and manipulation of ionic diffusion in mixed electronic-ionic conductors
Op de Beeck, J, Labyedh, N, Sepúlveda, A, Spampinato, V, Franquet, A, Conard, T, Vereecken, P M, Celano, U
Published in Nanoscale (01.01.2018)
Published in Nanoscale (01.01.2018)
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Interface engineering for Ge metal-oxide–semiconductor devices
Dimoulas, A., Brunco, D.P., Ferrari, S., Seo, J.W., Panayiotatos, Y., Sotiropoulos, A., Conard, T., Caymax, M., Spiga, S., Fanciulli, M., Dieker, Ch, Evangelou, E.K., Galata, S., Houssa, M., Heyns, M.M.
Published in Thin solid films (04.06.2007)
Published in Thin solid films (04.06.2007)
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Innovations in Trauma-Informed Care: Building the Nation's First System of Trauma-Informed Recreation Centers
Holmes, Megan R, King, Jennifer A, Miller, Emily K, King-White, Dakota L, Korsch-Williams, Amy E, Johnson, Erica M, Oliver, Tomeika S, Conard, Ivan T
Published in Behavioral sciences (09.05.2023)
Published in Behavioral sciences (09.05.2023)
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Insights into the nanoscale lateral and vertical phase separation in organic bulk heterojunctions via scanning probe microscopy
Chintala, R, Tait, J G, Eyben, P, Voroshazi, E, Surana, S, Fleischmann, C, Conard, T, Vandervorst, W
Published in Nanoscale (14.02.2016)
Published in Nanoscale (14.02.2016)
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Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions
Le, Q.T., Gül Arslan, E., Rip, J., De Coster, H., Verdonck, P., Radisic, D., Schleicher, F., Vaesen, I., Conard, T., Altamirano-Sanchez, E.
Published in Micro and Nano Engineering (01.06.2023)
Published in Micro and Nano Engineering (01.06.2023)
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Fundamental aspects of Arn+ SIMS profiling of common organic semiconductors
Fleischmann, C., Conard, T., Havelund, R., Franquet, A., Poleunis, C., Voroshazi, E., Delcorte, A., Vandervorst, W.
Published in Surface and interface analysis (01.11.2014)
Published in Surface and interface analysis (01.11.2014)
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A Multi-Technique Approach for a Complete Thin Film Characterisation
Gerrard, N., Counsell, J., Roberts, A., Blomfield, C., Moffitt, C., Conard, T.
Published in Journal of Surface Analysis (2019)
Published in Journal of Surface Analysis (2019)
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Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET
Arimura, H., Brus, S., Franco, J., Oniki, Y., Vandooren, A., Conard, T., Chan, B.-T., Kannan, B., Samiee, M., Li, W., Deminskyi, P., Shero, E., Bakke, J., Jourdan, N., Verni, G. Alessio, Maes, J. W., Givens, M., Ragnarsson, L.-A., Mitard, J., Litta, E. Dentoni, Horiguchi, N.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Nohira, H., Tsai, W., Besling, W., Young, E., Petry, J., Conard, T., Vandervorst, W., De Gendt, S., Heyns, M., Maes, J., Tuominen, M.
Published in Journal of non-crystalline solids (01.05.2002)
Published in Journal of non-crystalline solids (01.05.2002)
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Conference Proceeding
Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes
Menou, N., Popovici, M., Clima, S., Opsomer, K., Polspoel, W., Kaczer, B., Rampelberg, G., Tomida, K., Pawlak, M. A., Detavernier, C., Pierreux, D., Swerts, J., Maes, J. W., Manger, D., Badylevich, M., Afanasiev, V., Conard, T., Favia, P., Bender, H., Brijs, B., Vandervorst, W., Van Elshocht, S., Pourtois, G., Wouters, D. J., Biesemans, S., Kittl, J. A.
Published in Journal of applied physics (01.11.2009)
Published in Journal of applied physics (01.11.2009)
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