Overgrowth of GaN on GaN nanowires produced by mask-less etching
Frajtag, P., Hosalli, A.M., Samberg, J.P., Colter, P.C., Paskova, T., El-Masry, N.A., Bedair, S.M.
Published in Journal of crystal growth (01.08.2012)
Published in Journal of crystal growth (01.08.2012)
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Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers
Routh, E L, Abdelhamid, M, Colter, P C, Bonner, A J, El-Masry, N A, Bedair, S M
Published in Semiconductor science and technology (01.07.2022)
Published in Semiconductor science and technology (01.07.2022)
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High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE
Fetzer, C.M., King, R.R., Colter, P.C., Edmondson, K.M., Law, D.C., Stavrides, A.P., Yoon, H., Ermer, J.H., Romero, M.J., Karam, N.H.
Published in Journal of crystal growth (19.01.2004)
Published in Journal of crystal growth (19.01.2004)
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Characteristics of low-temperature-grown GaN films on Si(111)
Hassan, Z., Lee, Y.C., Yam, F.K., Ibrahim, K., Kordesch, M.E., Halverson, W., Colter, P.C.
Published in Solid state communications (01.02.2005)
Published in Solid state communications (01.02.2005)
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Growth and Characterization of InxGa1−xAs/GaAs1−yPy Strained-Layer Superlattices with High Values of y (~80%)
Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Bedair, S. M.
Published in Journal of electronic materials (01.05.2013)
Published in Journal of electronic materials (01.05.2013)
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Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition
Namavar, F, Colter, P.C, Planes, N, Fraisse, B, Pernot, J, Juillaguet, S, Camassel, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition
Zhou, W. L., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., Pankove, J. I.
Published in Journal of materials research (01.04.1999)
Published in Journal of materials research (01.04.1999)
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In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs
Kussmaul, A., Vernon, S., Colter, P. C., Sudharsanan, R., Mastrovito, A., Linden, K. J., Karam, N. H., Warnick, S. C., Dahleh, M. A.
Published in Journal of electronic materials (01.10.1997)
Published in Journal of electronic materials (01.10.1997)
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Silicon monolayer growth using dichlorosilane and hydrogen in a near atmospheric pressure chemical vapor deposition reactor
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Atomic layer epitaxy of device quality AlGaAs and AlAs
Hayafuji, N., Eldallal, G.M., Dip, A., Colter, P.C., El-Masry, N.A., Bedair, S.M.
Published in Applied surface science (01.12.1994)
Published in Applied surface science (01.12.1994)
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Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs
Lee, B., Bose, S.S., Kim, M.H., Reed, A.D., Stillman, G.E., Wang, W.I., Vina, L., Colter, P.C.
Published in Journal of crystal growth (01.05.1989)
Published in Journal of crystal growth (01.05.1989)
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Atomic layer epitaxy for resonant tunneling devices
Seabaugh, A.C., Luscombe, J.H., Randall, J.N., Colter, P.C., Dip, A., Eldallal, G.M., Bedair, S.M.
Published in Thin solid films (25.03.1993)
Published in Thin solid films (25.03.1993)
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Multijunction solar cells with subcell materials highly lattice-mismatched to germanium
Law, D.C., Fetzer, C.M., King, R.R., Colter, P.C., Yoon, H., Isshiki, T.D., Edmondson, K.M., Haddad, M., Karam, N.H.
Published in Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 (2005)
Published in Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 (2005)
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Study of grown-in deep-level defects vs growth parameters in GaAs grown by VPE technique
LI, S. S, WANG, W. L, COLTER, P. C, LITTON, C. W
Published in Journal of electronic materials (1983)
Published in Journal of electronic materials (1983)
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Atomic layer epitaxy of AlAs and AlxGa1-xAs for device application
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The optimization of high indium and high phosphorus content InGaAs/GaAsP strained layer superlattices for use in multijunction solar cells
Carlin, C. Zachary, Bradshaw, G. K., Samberg, J. P., Colter, P. C., El-Masry, N. A., Bedair, S. M.
Published in 2012 38th IEEE Photovoltaic Specialists Conference (01.06.2012)
Published in 2012 38th IEEE Photovoltaic Specialists Conference (01.06.2012)
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