Strain mapping of silicon carbon suspended membranes
Colston, Gerard, Newell, Oliver, Rhead, Stephen D., Shah, Vishal A., Myronov, Maksym
Published in Materials & design (01.12.2021)
Published in Materials & design (01.12.2021)
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Journal Article
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate
Colston, Gerard, Turner, Kelly, Renz, Arne, Perera, Kushani, Gammon, Peter M, Antoniou, Marina, Shah, Vishal A
Published in Materials (01.04.2024)
Published in Materials (01.04.2024)
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Journal Article
Epitaxial trench refill of 4H-SiC by chlorinated chemistry
Colston, Gerard, Turner, Kelly, Renz, Arne, Gammon, Peter, Antoniou, Marina, Mawby, Philip A., Shah, Vishal A.
Published in Applied physics letters (06.05.2024)
Published in Applied physics letters (06.05.2024)
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Journal Article
Integration of silicon carbide on silicon for its application in ultraviolet photodetectors
Myronov, Maksym, Colston, Gerard
Published in 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM) (01.07.2017)
Published in 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM) (01.07.2017)
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Conference Proceeding
Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride
Turner, Kelly, Colston, Gerard, Stokeley, Katarzyna, Newton, Andrew, Renz, Arne, Antoniou, Marina, Gammon, Peter, Mawby, Philip, Shah, Vishal
Published in Advanced materials interfaces (06.09.2024)
Published in Advanced materials interfaces (06.09.2024)
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Journal Article
Analysis of surface defects in Si1−yCy epilayers formed by the oversaturation of carbon
Colston, Gerard, Myronov, Maksym, Rhead, Stephen, Leadley, David
Published in Semiconductor science and technology (15.10.2015)
Published in Semiconductor science and technology (15.10.2015)
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Journal Article
Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
Bechler, Stefan, Kern, Michal, Funk, Hannes Simon, Colston, Gerard, Fischer, Inga Anita, Weißhaupt, David, Myronov, Maksym, van Slageren, Joris, Schulze, Jörg
Published in Semiconductor science and technology (03.08.2018)
Published in Semiconductor science and technology (03.08.2018)
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Journal Article
Analysis of surface defects in Si 1− y C y epilayers formed by the oversaturation of carbon
Colston, Gerard, Myronov, Maksym, Rhead, Stephen, Leadley, David
Published in Semiconductor science and technology (01.11.2015)
Published in Semiconductor science and technology (01.11.2015)
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Journal Article
Electrical characterization of n-doped SiGeSn diodes with high Sn content
Clausen, Caterina J, Fischer, Inga A, Weisshaupt, David, Baerwolf, Florian, Tillack, Bernd, Colston, Gerard, Myronov, Maksym, Oehme, Michael, Schulze, Joerg
Published in Semiconductor science and technology (01.12.2018)
Published in Semiconductor science and technology (01.12.2018)
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Journal Article
Formation of Mn 5 Ge 3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
Bechler, Stefan, Kern, Michal, Funk, Hannes Simon, Colston, Gerard, Fischer, Inga Anita, Weißhaupt, David, Myronov, Maksym, van Slageren, Joris, Schulze, Jörg
Published in Semiconductor science and technology (01.09.2018)
Published in Semiconductor science and technology (01.09.2018)
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Journal Article
Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD
Myronov, Maksym, Newell, Oliver J., Colston, Gerard, Rhead, Stephen D., Dolbnya, Igor P., Leadley, David R., Shah, Vishal A.
Published in Materials science forum (24.05.2016)
Published in Materials science forum (24.05.2016)
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Journal Article
Si sub(1-x)C sub(x)/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current
Colston, Gerard, Myronov, Maksym, Rhead, Stephen, Shah, Vishal, Sharma, Yogesh, Mawby, Phil, Leadley, David
Published in Materials science forum (01.06.2015)
Published in Materials science forum (01.06.2015)
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Journal Article