AlGaN/AlN/GaN high-power microwave HEMT
Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N.-Q., Buttari, D., Smorchkova, I.P., Keller, S., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.10.2001)
Published in IEEE electron device letters (01.10.2001)
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Journal Article
Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs
Chini, A., Buttari, D., Coffie, R., Shen, L., Heikman, S., Chakraborty, A., Keller, S., Mishra, U.K.
Published in IEEE electron device letters (01.05.2004)
Published in IEEE electron device letters (01.05.2004)
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Journal Article
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation
Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.01.2004)
Published in IEEE electron device letters (01.01.2004)
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Journal Article
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
Coffie, R., Buttari, D., Heikman, S., Keller, S., Chini, A., Shen, L., Mishra, U.K.
Published in IEEE electron device letters (01.10.2002)
Published in IEEE electron device letters (01.10.2002)
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Journal Article
Gallium nitride based transistors
Xing, H, Keller, S, Wu, Y-F, McCarthy, L, Smorchkova, I P, Buttari, D, Coffie, R, Green, D S, Parish, G, Heikman, S, Shen, L, Zhang, N, Xu, J J, Keller, B P, DenBaars, S P, Mishra, U K
Published in Journal of physics. Condensed matter (13.08.2001)
Published in Journal of physics. Condensed matter (13.08.2001)
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Journal Article
In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy
Heying, B., Smorchkova, I.P., Coffie, R., Gambin, V., Chen, Y.C., Sutton, W., Lam, T., Kahr, M.S., Sikorski, K.S., Wojtowicz, M.
Published in Electronics letters (2007)
Published in Electronics letters (2007)
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Journal Article
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Moran, B., Heikman, S., Zhang, N.Q., Shen, L., Coffie, R., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.02.2002)
Published in IEEE electron device letters (01.02.2002)
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Journal Article
Total GaN solution to electrical power conversion
Wu, Y.-F, Coffie, R., Fichtenbaum, N., Dora, Y., Suh, C. S., Shen, L., Parikh, P., Mishra, U. K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
2.1 A∕mm current density AlGaN∕GaN HEMT
Chini, A., Coffie, R., Meneghesso, G., Zanoni, E., Buttari, D., Heikman, S., Keller, S., Mishra, U.K.
Published in Electronics letters (03.04.2003)
Published in Electronics letters (03.04.2003)
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Journal Article
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology
Paidi, V., Shouxuan Xie, Coffie, R., Moran, B., Heikman, S., Keller, S., Chini, A., DenBaars, S.P., Mishra, U.K., Long, S., Rodwell, M.J.W.
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
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Journal Article
A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO
Lan, X., Wojtowicz, M., Smorchkova, I., Coffie, R., Tsai, R., Heying, B., Truong, M., Fong, F., Kintis, M., Namba, C., Oki, A., Wong, T.
Published in IEEE microwave and wireless components letters (01.07.2006)
Published in IEEE microwave and wireless components letters (01.07.2006)
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Journal Article
In situ SiN passivation of AIGaN/GaN HEMTs by molecular beam epitaxy
HEYING, B, SMORCHKOVA, I. P, COFFIE, R, GAMBIN, V, CHEN, Y. C, SUTTON, W, LAM, T, KAHR, M. S, SIKORSKI, K. S, WOJTOWICZ, M
Published in Electronics letters (05.07.2007)
Published in Electronics letters (05.07.2007)
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Journal Article
Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Moran, B., Heikman, S., Zhang, N.Q., Shen, L., Coffie, R., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.02.2002)
Published in IEEE electron device letters (01.02.2002)
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Journal Article
Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs
Jimnez, A., Buttari, D., Jena, D., Coffie, R., Heikman, S., Zhang, N.Q., Shen, L., Calleja, E., Munoz, E., Speck, J., Mishra, U.K.
Published in IEEE electron device letters (01.06.2002)
Published in IEEE electron device letters (01.06.2002)
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Journal Article
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs
Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Chavarkar, P., Coffie, R., Zhang, N.Q., Heikinan, S., Shen, L., Xing, H., Zheng, C., Mishra, U.K.
Published in IEEE electron device letters (01.03.2002)
Published in IEEE electron device letters (01.03.2002)
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Journal Article
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
SHEN, L, COFFIE, R, BUTTARI, D, HEIKMAN, S, CHAKRABORTY, A, CHINI, A, KELLER, S, DENBAARS, S. P, MISHRA, U. K
Published in Journal of electronic materials (01.05.2004)
Published in Journal of electronic materials (01.05.2004)
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Conference Proceeding
Journal Article
Unpassivated p-GaN∕AlGaN∕GaN HEMTs with 7.1 W∕mm at 10 GHz
Coffie, R., Shen, L., Parish, G., Chini, A., Buttari, D., Heikman, S., Keller, S., Mishra, U.K.
Published in Electronics letters (18.09.2003)
Published in Electronics letters (18.09.2003)
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Journal Article
Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs
Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Chavarkar, P., Coffie, R., Zhang, N.Q., Heikinan, S., Shen, L., Xing, H., Zheng, C., Mishra, U.K.
Published in IEEE electron device letters (01.03.2002)
Published in IEEE electron device letters (01.03.2002)
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Journal Article
Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies fT>60 GHz
Ching-Hui Chen, Coffie, R., Krishnamurthy, K., Keller, S., Rodwell, M., Mishra, U.K.
Published in IEEE electron device letters (01.12.2000)
Published in IEEE electron device letters (01.12.2000)
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Journal Article