Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
Gunning, Brendan P., Fabien, Chloe A. M., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan, Wang, Shuo, Fischer, Alec M., Ponce, Fernando A.
Published in Journal of applied physics (28.01.2015)
Published in Journal of applied physics (28.01.2015)
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Journal Article
Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces
Cheng, Zhe, Koh Yee Rui, Habib, Ahmad, Hu Renjiu, Shi Jingjing, Liao, Michael E, Wang Yekan, Bai Tingyu, Li Ruiyang, Lee, Eungkyu, Clinton, Evan A, Matthews, Christopher M, Engel, Zachary, Yates, Luke, Luo Tengfei, Goorsky Mark S, Alan, Doolittle W, Tian Zhiting, Hopkins, Patrick E, Graham, Samuel
Published in Communications physics (24.06.2020)
Published in Communications physics (24.06.2020)
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Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis
Vadiee, Ehsan, Fischer, Alec M., Clinton, Evan A., McFavilen, Heather, Patadia, Arshey, Arena, Chantal, Ponce, Fernando A., King, Richard R., Honsberg, Christiana B., Doolittle, William A.
Published in Japanese Journal of Applied Physics (01.10.2019)
Published in Japanese Journal of Applied Physics (01.10.2019)
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Journal Article
Adlayer control for tunable AlGaN self-assembled superlattices
Engel, Zachary, Clinton, Evan A., Motoki, Keisuke, Ahmad, Habib, Matthews, Christopher M., Doolittle, W. Alan
Published in Journal of applied physics (28.10.2021)
Published in Journal of applied physics (28.10.2021)
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Journal Article
Comprehensive Analysis of Metal Modulated Epitaxial GaN
Ahmad, Habib, Motoki, Keisuke, Clinton, Evan A, Matthews, Christopher M, Engel, Zachary, Doolittle, W. Alan
Published in ACS applied materials & interfaces (19.08.2020)
Published in ACS applied materials & interfaces (19.08.2020)
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Journal Article
Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices
Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.
Published in Journal of applied physics (07.06.2020)
Published in Journal of applied physics (07.06.2020)
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Journal Article
Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)]
Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.
Published in Journal of applied physics (21.08.2020)
Published in Journal of applied physics (21.08.2020)
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Journal Article
Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μ m/h by plasma-assisted molecular beam epitaxy
Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C.
Published in Journal of applied physics (21.10.2015)
Published in Journal of applied physics (21.10.2015)
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Journal Article
The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance
Vadiee, Ehsan, Clinton, Evan A., Carpenter, Joe V., McFavilen, Heather, Arena, Chantal, Holman, Zachary C., Honsberg, Christiana B., Doolittle, W. Alan
Published in Journal of applied physics (28.08.2019)
Published in Journal of applied physics (28.08.2019)
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Journal Article
A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions
Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Doolittle, W. Alan, Fischer, Alec M., Wei, Yong O., Xie, Hongen, Ponce, Fernando A.
Published in Solid-state electronics (01.10.2017)
Published in Solid-state electronics (01.10.2017)
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Journal Article
III족 질화물 반도체 성장 속도를 증가 및 이온 플럭스 훼손의 감소를 위한 시스템 및 방법
GUNNING BRENDAN PATRICK, FABIEN CHLOE A.M, DOOLITTLE WILLIAM ALAN, CLINTON EVAN A, MEROLA JOSEPH J
Year of Publication 21.03.2018
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Year of Publication 21.03.2018
Patent
The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance
Vadiee, Ehsan, Clinton, Evan A., Carpenter, Joe V., McFavilen, Heather, Arena, Chantal, Holman, Zachary C., Honsberg, Christiana B., Doolittle, W. Alan
Published in Journal of applied physics (28.08.2019)
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Published in Journal of applied physics (28.08.2019)
Journal Article
InGaN solar cells with regrown GaN homojunction tunnel contacts
Vadiee, Ehsan, Clinton, Evan A., McFavilen, Heather, Weidenbach, Alex S., Engel, Zachary, Matthews, Christopher, Zhang, Chaomin, Arena, Chantal, King, Richard R., Honsberg, Christiana B., Doolittle, W. Alan
Published in Applied physics express (01.08.2018)
Published in Applied physics express (01.08.2018)
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Journal Article
Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy
Gunning, Brendan P., Clinton, Evan A., Merola, Joseph J., Doolittle, W. Alan, Bresnahan, Rich C.
Published in Journal of applied physics (21.10.2015)
Published in Journal of applied physics (21.10.2015)
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Journal Article
Large-area III-nitride double-heterojunction solar cells with record-high in-content InGaN absorbing layers
Fabien, Chloe A. M., Gunning, Brendan P., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan
Published in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) (01.06.2015)
Published in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) (01.06.2015)
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Conference Proceeding
Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
Gunning, Brendan P., Fabien, Chloe A. M., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan, Wang, Shuo, Fischer, Alec M., Ponce, Fernando A.
Published in Journal of applied physics (28.01.2015)
Published in Journal of applied physics (28.01.2015)
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Journal Article
Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
Gunning, Brendan P., Fabien, Chloe A. M., Merola, Joseph J., Clinton, Evan A., Doolittle, W. Alan, Wang, Shuo, Fischer, Alec M., Ponce, Fernando A.
Published in Journal of applied physics (26.01.2015)
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Published in Journal of applied physics (26.01.2015)
Journal Article