RuO2/GaN Schottky contact formation with superior forward and reverse characteristics
Lee, Suk-Hun, Chun, Jae-Kyu, Hur, Jae-Jin, Lee, Jae-Seung, Rue, Gi-Hong, Bae, Young-Ho, Hahm, Sung-Ho, Lee, Yong-Hyun, Lee, Jung-Hee
Published in IEEE electron device letters (01.06.2000)
Published in IEEE electron device letters (01.06.2000)
Get full text
Journal Article
RuO(2)/GaN Schottky contact formation with superiorforward and reverse characteristics
Lee, Suk-Hun, Chun, Jae-Kyu, Hur, Jae-Jin, Lee, Jae-Seung, Rue, Gi-Hong, Bae, Young-Ho, Hahm, Sung-Ho, Lee, Yong-Hyun, Lee, Jung-Hee
Published in IEEE electron device letters (01.06.2000)
Published in IEEE electron device letters (01.06.2000)
Get full text
Journal Article
RuO 2 /GaN Schottky contact formation with superior forward and reverse characteristics
Suk-Hun Lee, Jae-Kyu Chun, Jae-Jin Hur, Jae-Seung Lee, Gi-Hong Rue, Young-Ho Bae, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee
Published in IEEE electron device letters (01.06.2000)
Published in IEEE electron device letters (01.06.2000)
Get full text
Journal Article
RuO sub(2)/GaN Schottky contact formation with superior forward and reverse characteristics
Lee, Suk-Hun, Chun, Jae-Kyu, Hur, Jae-Jin, Lee, Jae-Seung, Rue, Gi-Hong, Bae, Young-Ho, Hahm, Sung-Ho, Lee, Yong-Hyun, Lee, Jung-Hee
Published in IEEE electron device letters (01.01.2000)
Published in IEEE electron device letters (01.01.2000)
Get full text
Journal Article