Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time
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Published in IEEE journal of solid-state circuits (01.04.2019)
Published in IEEE journal of solid-state circuits (01.04.2019)
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Year of Publication 19.09.2023
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Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub-[Formula Omitted] A Sensing Resolution, and 17.5-nS Read Access Time
Yi-Chun, Shih, Chia-Fu, Lee, Yen-An, Chang, Po-Hao, Lee, Lin, Hon-Jarn, Yu-Lin, Chen, Ku-Feng, Lin, Ta-Ching Yeh, Hung-Chang, Yu, Chuang, Harry H L, Yu-Der Chih, Chang, Jonathan
Published in IEEE journal of solid-state circuits (01.01.2019)
Published in IEEE journal of solid-state circuits (01.01.2019)
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A Novel Phase Change Material RF Switch with 16nm Technology to Achieve Low Voltage and Low RonCoff for mmWave
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Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
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METHOD OF FORMING DIFFERENT TYPES OF MEMORY DEVICES
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