Memory cell with top electrode via
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Year of Publication 01.11.2022
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Year of Publication 01.11.2022
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Year of Publication 02.12.2021
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Year of Publication 02.12.2021
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Year of Publication 30.11.2021
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Year of Publication 30.11.2021
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Year of Publication 25.11.2021
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Year of Publication 25.11.2021
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Memory cell with top electrode via
Ku, Ming-Che, Huang, Sheng-Huang, Tu, Tsun Chung, Chuang, Harry-Hak-Lay, Wang, Hung Cho, Tsai, Jiunyu
Year of Publication 11.10.2022
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Year of Publication 11.10.2022
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Year of Publication 22.09.2022
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Year of Publication 22.09.2022
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SEMICONDUCTOR-ON-INSULATOR (SOI) SEMICONDUCTOR STRUCTURES INCLUDING A HIGH-K DIELECTRIC LAYER AND METHODS OF MANUFACTURING THE SAME
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Year of Publication 17.08.2023
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Year of Publication 17.08.2023
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Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit
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Year of Publication 15.08.2023
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Year of Publication 15.08.2023
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Year of Publication 11.07.2024
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Year of Publication 11.07.2024
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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
CHUANG, HARRY-HAK-LAY, TSAI, JIUNYU, KALNITSKY, ALEXANDER, HUANG, SHENG-HUANG, WANG, HUNG CHO
Year of Publication 07.10.2021
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Year of Publication 07.10.2021
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SPLIT GATE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Tsai, Chia-Shiung, Wu, Chang-Ming, Chuang, Harry-Hak-Lay, Wu, Wei Cheng, Liu, Shih-Chang
Year of Publication 07.10.2021
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Year of Publication 07.10.2021
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SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION
HUANG, SHENG-HAUNG, CHUANG, HARRY-HAK-LAY, KALNITSKY, ALEXANDER, CHIANG, TIEN-WEI
Year of Publication 30.09.2021
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Year of Publication 30.09.2021
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