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Termination structure for trench DMOS device and method of making the same
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Year of Publication 04.11.2004
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Year of Publication 04.11.2004
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DMOS device having a trenched bus structure
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Year of Publication 04.11.2004
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Termination structure of DMOS device
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Year of Publication 07.10.2004
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Year of Publication 07.10.2004
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Termination structure of DMOS device
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Year of Publication 07.10.2004
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Year of Publication 07.10.2004
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Year of Publication 11.01.2015
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Year of Publication 11.01.2015
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Transistor with highly uniform threshold voltage
Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song, Hsieh, Hsin-Huang
Year of Publication 13.01.2004
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Year of Publication 13.01.2004
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Transistor with highly uniform threshold voltage
TSENG MAO-SONG, HSIEH HSIN-HUANG, CHANG CHIEN-PING, CHUANG CHIAO-SHUN
Year of Publication 13.01.2004
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Year of Publication 13.01.2004
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Fabricating a DMOS transistor
Chuang, Chiao-Shun, Chang, Chien-Ping, Tseng, Mao-Song, Ni, Cheng-Tsung
Year of Publication 09.12.2003
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Year of Publication 09.12.2003
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Silicon carbide trench schottky barrier devices
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Year of Publication 01.07.2014
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Year of Publication 01.07.2014
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Fabricating a DMOS transistor
Chang, Chien-Ping, Chuang, Chiao-Shun, Tseng, Mao-Song, Ni, Cheng-Tsung
Year of Publication 22.05.2003
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Year of Publication 22.05.2003
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Method for forming dual oxide layers at bottom of trench
Chang, Chien-Ping, Chuang, Chiao-Shun, Tseng, Mao-Song, Ni, Cheng-Tsung
Year of Publication 10.04.2003
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Year of Publication 10.04.2003
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