Method for forming dual oxide layers at bottom of trench
Chang, Chien-Ping, Chuang, Chiao-Shun, Tseng, Mao-Song, Ni, Cheng-Tsung
Year of Publication 10.04.2003
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Year of Publication 10.04.2003
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Transistor with highly uniform threshold voltage
Chang, Chien-Ping, Chuang, Chiao-Shun, Tseng, Mao-Song, Hsieh, Hsin-Huang
Year of Publication 27.03.2003
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Year of Publication 27.03.2003
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Transistor with highly uniform threshold voltage
TSENG MAO-SONG, HSIEH HSIN-HUANG, CHANG CHIEN-PING, CHUANG CHIAO-SHUN
Year of Publication 27.03.2003
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Year of Publication 27.03.2003
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Forming method of dual-oxide structure in trench bottom portion
NI, CHENG-TSUNG, CHANG, CHIEN-PING, CHUANG, CHIAO,-SHUN, TSENG, MAO-SONG
Year of Publication 01.03.2003
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Year of Publication 01.03.2003
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Manufacture method of DMOS transistor
NI, CHENG-TSUNG, TZENG, MAU-SUNG, CHUANG, CHIAO-SHUN, CHANG, CHIEN-PING
Year of Publication 21.11.2002
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Year of Publication 21.11.2002
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Process for forming gate oxide layer
Tseng, Mao-Song, Chang, Su-Wen, Chang, Chien-Ping, Chuang, Chiao-Shun
Year of Publication 17.01.2002
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Year of Publication 17.01.2002
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