The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode
Chang Seok Kang, Hag-Ju Cho, Rino Choi, Young-Hee Kim, Chang Yong Kang, Se Jong Rhee, Changhwan Choi, Akbar, M.S., Lee, J.C.
Published in IEEE transactions on electron devices (01.02.2004)
Published in IEEE transactions on electron devices (01.02.2004)
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Journal Article
The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics
Hag Ju Cho, Hong Yu Yu, Chang, V.S., Akheyar, A., Jakschik, S., Conard, T., Hantschel, T., Delabie, A., Adelmann, C., Van Elshocht, S., Ragnarsson, L.-A., Schram, T., Absil, P., Biesemans, S.
Published in IEEE electron device letters (01.07.2008)
Published in IEEE electron device letters (01.07.2008)
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Journal Article
Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing
Nieh, R.E., Chang Seok Kang, Hag-Ju Cho, Onishi, K., Rino Choi, Krishnan, S., Jeong Hee Han, Young-Hee Kim, Akbar, M.S., Lee, J.C.
Published in IEEE transactions on electron devices (01.02.2003)
Published in IEEE transactions on electron devices (01.02.2003)
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Journal Article
Structural and electrical properties of HfO2 with top nitrogen incorporated layer
Hag-Ju Cho, Chang Seok Kang, Onishi, K., Gopalan, S., Nieh, R., Rino Choi, Krishnan, S., Lee, J.C.
Published in IEEE electron device letters (01.05.2002)
Published in IEEE electron device letters (01.05.2002)
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Journal Article
Area dependence of TDDB characteristics for HfO2 gate dielectrics
Young Hee Kim, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Nieh, R., Gopalan, S., Choi, R., Jeong Han, Krishnan, S., Lee, J.C.
Published in IEEE electron device letters (01.10.2002)
Published in IEEE electron device letters (01.10.2002)
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Journal Article
Thickness dependence of Weibull slopes of HfO2 gate dielectrics
Young Hee Kim, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Rino Choi, Krishnan, S., Akbar, M.S., Lee, J.C.
Published in IEEE electron device letters (01.01.2003)
Published in IEEE electron device letters (01.01.2003)
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Journal Article
Investigation on Molybdenum and Its Conductive Oxides as p-Type Metal Gate Candidates
Li, Zilan, Schram, Tom, Witters, Thomas, Cho, Hag-Ju, O’Sullivan, Barry, Yamada, Naoki, Takaaki, Tsunoda, Hooker, Jacob, De Gendt, Stefan, De Meyer, Kristin
Published in Journal of the Electrochemical Society (2008)
Published in Journal of the Electrochemical Society (2008)
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Journal Article
Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics
Rino Choi, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Kim, Y.H., Krishnan, S., Akbar, M.S., Lee, J.C.
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates
Onishi, K., Chang Seok Kang, Rino Choi, Hag-Ju Cho, Young Hee Kim, Krishnan, S., Akbar, M.S., Lee, J.C.
Published in IEEE electron device letters (01.04.2003)
Published in IEEE electron device letters (01.04.2003)
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Journal Article
Bias-temperature instabilities of polysilicon gate HfO2 MOSFETs
Onishi, K, Choi, Rino, Kang, Chang Seok, Cho, Hag-Ju, Kim, Young Hee, Nieh, R.E, Han, Jeong, Krishnan, S.A, Akbar, M.S, Lee, J.C
Published in IEEE transactions on electron devices (01.06.2003)
Published in IEEE transactions on electron devices (01.06.2003)
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Journal Article
High performance 14nm FinFET technology for low power mobile RF application
Eui-Young Jeong, Mingeun Song, Ilhyeon Choi, Huichul Shin, Jinhyeok Song, Wooyeol Maeng, Halim Park, Hyunki Yoon, Sungchul Kim, Sunny Park, Bong Ho You, Hag-Ju Cho, Young Chang An, Lee, S. K., Kwon, S. D., Soon-Moon Jung
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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Conference Proceeding
Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
Cho, Hag-Ju, Lee, Hye Lan, Park, Hong Bae, Jeon, Taek Soo, Park, Seong Geon, Jin, Beom Jun, Kang, Sang Bom, Shin, Yu Gyun, Chung, U-In, Moon, Joo Tae
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
RAGNARSSON, Lars-Ake, CHANG, Vincent S, BIESEMANS, Serge, HONG YU YU, CHO, Hag-Ju, CONARD, Thierry, KAI MIN YIN, DELABIE, Annelies, SWERTS, Johan, SCHRAM, Tom, DE GENDT, Stefan
Published in IEEE electron device letters (01.06.2007)
Published in IEEE electron device letters (01.06.2007)
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Journal Article
Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing
Onishi, K, Kang, Chang Seok, Choi, Rino, Cho, Hag-Ju, Gopalan, S, Nieh, R.E, Krishnan, S.A, Lee, J.C
Published in IEEE transactions on electron devices (01.02.2003)
Published in IEEE transactions on electron devices (01.02.2003)
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Journal Article
Fabrication and electrical characterization of Pt/(Ba,Sr)TiO3/Pt capacitors for ultralarge-scale integrated dynamic random access memory applications
PARK, S. O, HWANG, C. S, CHO, H.-J, KANG, C. S, KANG, H.-K, LEE, S. I, LEE, M. Y
Published in Japanese journal of applied physics (1996)
Published in Japanese journal of applied physics (1996)
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Conference Proceeding
Preparation and characterization of iridium oxide thin films grown by DC reactive sputtering
CHO, H.-J, HORII, H, HWANG, C. S, KIM, J.-W, KANG, C. S, LEE, B. T, LEE, S. I, KOH, Y. B, LEE, M. Y
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Conference Proceeding
Journal Article
Deposition characteristics of (Ba, Sr)TiO3 thin films by liquid source metal-organic chemical vapor deposition at low substrate temperatures
KANG, C. S, CHO, H.-J, HWANG, C. S, LEE, B. T, LEE, K.-H, HORII, H, KIM, W. D, LEE, S. I, LEE, M. Y
Published in Japanese journal of applied physics (1997)
Published in Japanese journal of applied physics (1997)
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Journal Article
Semiconductor device
NAM YUN SUK, KIM HO JUN, LEE KYOUNG WOO, LEE SUNG MOON, CHO HAG JU, OH DA RONG, CHA SEUNG MIN, KIM JIN KYU
Year of Publication 15.12.2023
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Year of Publication 15.12.2023
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