A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput
LEE, Kwang-Jin, CHO, Beak-Hyung, PARK, Mu-Hui, RO, Yu-Hwan, CHOI, Joon-Yong, KIM, Ki-Sung, KIM, Young-Ran, SHIN, In-Cheol, LIM, Ki-Won, CHO, Ho-Keun, CHOI, Chang-Han, CHUNG, Won-Ryul, CHO, Woo-Yeong, KIM, Du-Eung, YOON, Yong-Jin, YU, Kwang-Suk, JEONG, Gi-Tae, JEONG, Hong-Sik, KWAK, Choong-Keun, KIM, Chang-Hyun, KIM, Kinam, KANG, Sangbeom, CHOI, Byung-Gil, OH, Hyung-Rok, LEE, Chang-Soo, KIM, Hye-Jin, PARK, Joon-Min, QI WANG
Published in IEEE journal of solid-state circuits (01.01.2008)
Published in IEEE journal of solid-state circuits (01.01.2008)
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Journal Article
Conference Proceeding
Enhanced write performance of a 64-mb phase-change random access memory
OH, Hyung-Rok, CHO, Beak-Hyung, JEONG, Gi-Tae, JEONG, Hong-Sik, KIM, Kinam, WOO YEONG CHO, KANG, Sangbeom, CHOI, Byung-Gil, KIM, Hye-Jin, KIM, Ki-Sung, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun
Published in IEEE journal of solid-state circuits (01.01.2006)
Published in IEEE journal of solid-state circuits (01.01.2006)
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Journal Article
Conference Proceeding
A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation
KANG, Sangbeom, WOO YEONG CHO, YU HWAN RO, KIM, Suyeon, HA, Choong-Duk, KIM, Ki-Sung, KIM, Young-Ran, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun, JEONG, Gitae, JEONG, Hongsik, CHO, Beak-Hyung, KIM, Kinam, SHIN, Yunsueng, LEE, Kwang-Jin, LEE, Chang-Soo, OH, Hyung-Rok, CHOI, Byung-Gil, QI WANG, KIM, Hye-Jin, PARK, Mu-Hui
Published in IEEE journal of solid-state circuits (2007)
Published in IEEE journal of solid-state circuits (2007)
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Conference Proceeding
Journal Article
A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW
Hoeju Chung, Byung Hoon Jeong, ByungJun Min, Youngdon Choi, Beak-Hyung Cho, Junho Shin, Jinyoung Kim, Jung Sunwoo, Joon-min Park, Qi Wang, Yong-jun Lee, Sooho Cha, Dukmin Kwon, Sangtae Kim, Sunghoon Kim, Yoohwan Rho, Mu-Hui Park, Jaewhan Kim, Ickhyun Song, Sunghyun Jun, Jaewook Lee, KiSeung Kim, Ki-won Lim, Won-ryul Chung, ChangHan Choi, HoGeun Cho, Inchul Shin, Woochul Jun, Seokwon Hwang, Ki-Whan Song, KwangJin Lee, Sang-whan Chang, Woo-Yeong Cho, Jei-Hwan Yoo, Young-Hyun Jun
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
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Conference Proceeding
Non-volatile Memory Device
KANG IN HO, CHOO GYO SOO, CHO YONG SUNG, BYEON DAE SEOK, CHO BEAK HYUNG, KIM MIN HWI
Year of Publication 04.04.2024
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Year of Publication 04.04.2024
Patent
A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation
Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, Kwang-Jin Lee, Chang-Soo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hongsik Jeong, Kinam Kim, Shin, Y.
Published in IEEE journal of solid-state circuits (01.01.2007)
Published in IEEE journal of solid-state circuits (01.01.2007)
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Journal Article
NONVOLATILE MEMORY DEVICE WITH REDUCED COUPLING NOISE AND DRIVING METHOD THEREOF
SUN, WOO JUNG, JEONG, DONG HOON, LEE, KWANG JIN, LEE, JAE YUN, CHO, BEAK HYUNG
Year of Publication 03.03.2016
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Year of Publication 03.03.2016
Patent
NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT
SUN, WOO JUNG, JEONG, DONG HOON, LEE, KWANG JIN, LEE, JAE YUN, CHO, BEAK HYUNG
Year of Publication 02.07.2015
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Year of Publication 02.07.2015
Patent