A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)
Woo Yeong Cho, Beak-hyung Cho, Byung-gil Choi, Hyung-rok Oh, Sang-beom Kang, Ki-sung Kim, Kyung-hee Kim, Du-eung Kim, Choong-keun Kwak, Hyun-geun Byun, Young-nam Hwang, Su-jin Ahn, Gi-tae Jung, Hong-sik Jung, Kinam Kim
Published in 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) (2004)
Published in 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) (2004)
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