InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
Putyato, M A, Bolkhovityanov, Yu B, Chikichev, S I, Feklin, D F, Gilinsky, A M, Gutakovskii, A K, Preobrazhenskii, V V, Revenko, M A, Semyagin, B R, Chtcherbatchev, K D
Published in Semiconductor science and technology (01.06.2003)
Published in Semiconductor science and technology (01.06.2003)
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Real-time ellipsometric study of Ge+ ion implanted SiO2 layers during fast annealing
Shvets, V. A., Tyschenko, I. E., Chikichev, S. I., Prokopiev, V. Yu
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers
Alperovich, V. L., Bolkhovityanov, Yu. B., Chikichev, S. I., Paulish, A. G., Terekhov, A. S., Yaroshevich, A. S.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2001)
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Ellipsometric study of tellurium molecular beam interaction with dehydrogenated vicinal silicon surfaces
Shvets, V.A, Chikichev, S.I, Pridachin, D.N, Yakushev, M.V, Sidorov, Yu.G, Mardezhov, A.S
Published in Thin solid films (01.02.1998)
Published in Thin solid films (01.02.1998)
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Study of GaAs MBE growth under Ga-rich conditions by RHEED intensity oscillations
Bosacchi, A., Franchi, S., Kanter, Yu.O., Chikichev, S.I.
Published in Journal of crystal growth (01.08.1989)
Published in Journal of crystal growth (01.08.1989)
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Artificial GeSi substrates for heteroepitaxy: Achievements and problems
Bolkhovityanov, Yu. B., Pchelyakov, O. P., Sokolov, L. V., Chikichev, S. I.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2003)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2003)
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Time-resolved microellipsometry for rapid thermal processes monitoring
Spesivtsev, E.V., Rykhlitsky, S.V., Shvets, V.A., Chikichev, S.I., Mardezhov, A.S., Nazarov, N.I., Volodin, V.A.
Published in Thin solid films (01.05.2004)
Published in Thin solid films (01.05.2004)
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GaAs MBE growth under Ga-rich conditions studied by RHEED intensity oscillations
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Conference Proceeding
Real‐time ellipsometric study of Ge + ion implanted SiO 2 layers during fast annealing
Shvets, V. A., Tyschenko, I. E., Chikichev, S. I., Prokopiev, V. Yu
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Experimental examination of gaas dissolution in in-p melt
Bolkhovityanov, Yu. B., Bolkhovityanova, R. I., Chikichev, S. I.
Published in Journal of electronic materials (01.05.1983)
Published in Journal of electronic materials (01.05.1983)
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