Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles
Pai, Kai-Yuan, Su, Chan-Lu, Yu, Wen-Huai, Yang, Yu-Min, Chiang, Yu-Tsung, Hsu, Sung-Lin, Yang, Cheng-Jui, Hsu, Wen-Ching, Lan, Chung-Wen, Lan, Wen-Chieh
Year of Publication 02.10.2018
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Year of Publication 02.10.2018
Patent
Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom
Pai, Kai-Yuan, Su, Chan-Lu, Yu, Wen-Huai, Yang, Yu-Min, Chiang, Yu-Tsung, Hsu, Sung-Lin, Yang, Cheng-Jui, Hsu, Wen-Ching, Lan, Chung-Wen, Lan, Wen-Chieh
Year of Publication 04.09.2018
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Year of Publication 04.09.2018
Patent