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Pitts, O.J., Lackner, D., Cherng, Y.T., Watkins, S.P.
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Published in Journal of crystal growth (15.11.2008)
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High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers
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Published in Journal of crystal growth (10.12.2004)
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Photo-enhanced chemical wet etching of GaN
Ko, C.H., Su, Y.K., Chang, S.J., Lan, W.H., Webb, Jim, Tu, M.C., Cherng, Y.T.
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Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2002)
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ZnSTeSe metal-semiconductor-metal photodetectors
Chang, S.J., Su, Y.K., Chen, W.R., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.
Published in IEEE photonics technology letters (01.02.2002)
Published in IEEE photonics technology letters (01.02.2002)
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Nitride-based 2DEG photodetectors with a large AC responsivity
Chang, S.J., Kuan, T.M., Ko, C.H., Su, Y.K., Webb, J.B., Bardwell, J.A., Liu, Y., Tang, H., Lin, W.J., Cherng, Y.T., Lan, W.H.
Published in Solid-state electronics (01.11.2003)
Published in Solid-state electronics (01.11.2003)
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Nitride-based HFETs with carrier confinement layers
Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.07.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.07.2004)
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Two-step epitaxial lateral overgrowth of GaN
Ko, C.H., Su, Y.K., Chang, S.J., Tsai, T.Y., Kuan, T.M., Lan, W.H., Lin, J.C., Lin, W.J., Cherng, Y.T., Webb, James B.
Published in Materials chemistry and physics (28.09.2003)
Published in Materials chemistry and physics (28.09.2003)
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ZnCdSeTe-based orange light-emitting diode
Chen, W.R., Chang, S.J., Su, Y.K., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.
Published in IEEE photonics technology letters (01.08.2002)
Published in IEEE photonics technology letters (01.08.2002)
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Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching
Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.07.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.07.2004)
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Dark currents in HgCdTe photodiodes passivated with ZnS/CdS
JUANG, F. S, SU, Y. K, CHANG, S. J, CHANG, S. M, SHU, F. S, CHIANG, C. D, CHERNG, Y. T, SUN, T. P
Published in Journal of the Electrochemical Society (01.04.1999)
Published in Journal of the Electrochemical Society (01.04.1999)
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Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode
JUANG, F. S, SU, Y. K, CHANG, S. M, CHANG, S. J, CHIANG, C. D, CHERNG, Y. T
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Published in Materials chemistry and physics (14.04.2000)
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Conference Proceeding
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Effects of substrate preheating for the growth of ZnXCd1-XTe/(1 0 0)GaAs by MOCVD
SZE, P. W, WANG, N. F, HOUNG, M. P, WANG, Y. H, HWANG, J. S, CHOU, W. Y, CHERNG, Y. T, WANG, C. H, CHIANG, C. D
Published in Journal of crystal growth (01.09.1997)
Published in Journal of crystal growth (01.09.1997)
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InAsSb and InPSb materials for mid infrared photodetectors
Lackner, D, Pitts, O J, Martine, M, Cherng, Y T, Mooney, P M, Thewalt, M, Plis, E, Watkins, S P
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
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Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD
Sze, P.W., Wang, N.F., Houng, M.P., Wang, Y.H., Cherng, Y.T., Wang, C.H.
Published in Journal of crystal growth (01.11.1996)
Published in Journal of crystal growth (01.11.1996)
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LAN, W. H, TU, S. L, CHERNG, Y. T, PANG, Y. M, YANG, S. J, HUANG, K. F
Published in Japanese Journal of Applied Physics (1991)
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OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5
Cherng, M. J., Cherng, Y. T., Jen, H. R., Harper, P., Cohen, R. M., B.Stringfellow, G.
Published in Journal of electronic materials (01.03.1986)
Published in Journal of electronic materials (01.03.1986)
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High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA
Hsieh, C-C, Wu, C-Y, Sun, T-P, Jih, F-W, Cherng, Y-T
Published in IEEE journal of solid-state circuits (01.08.1998)
Published in IEEE journal of solid-state circuits (01.08.1998)
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Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors
CHANG, S. J, SU, Y. K, JUANG, F. S, LIN, C. T, CHANG DER CHIANG, CHERNG, Y.-T
Published in IEEE journal of quantum electronics (01.05.2000)
Published in IEEE journal of quantum electronics (01.05.2000)
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ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy
Chen, W.R., Chang, S.J., Su, Y.K., Tsai, T.Y., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.
Published in Superlattices and microstructures (01.07.2002)
Published in Superlattices and microstructures (01.07.2002)
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Au/AuBe/Cr contact to p-ZnTe
Chang, S.J., Chen, W.R., Su, Y.K., Chen, J.F., Lan, W.H., Chiang, C.I., Lin, W.J., Cherng, Y.T., Liu, C.H.
Published in Electronics letters (01.03.2001)
Published in Electronics letters (01.03.2001)
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