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Graded base type-II InP/GaAsSb DHBT with f/sub T/%3D475 GHz
Snodgrass, W, Wu, Bing-Ruey, Hafez, W, Cheng, Keh-Yung, Feng, Milton
Published in IEEE electron device letters (01.02.2006)
Published in IEEE electron device letters (01.02.2006)
Get full text
Journal Article
Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz
Snodgrass, W., Bing-Ruey Wu, Hafez, W., Keh-Yung Cheng, Milton Feng
Published in IEEE electron device letters (01.02.2006)
Published in IEEE electron device letters (01.02.2006)
Get full text
Journal Article
Graded base type-II InP/GaAsSb DHBT with f sub(T)=475 GHz
Snodgrass, W, Wu, Bing-Ruey, Hafez, W, Cheng, Keh-Yung, Feng, Milton
Published in IEEE electron device letters (01.01.2006)
Published in IEEE electron device letters (01.01.2006)
Get full text
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