Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Yu, Zhihao, Ong, Zhun-Yong, Pan, Yiming, Cui, Yang, Xin, Run, Shi, Yi, Wang, Baigeng, Wu, Yun, Chen, Tangsheng, Zhang, Yong-Wei, Zhang, Gang, Wang, Xinran
Published in Advanced materials (Weinheim) (20.01.2016)
Published in Advanced materials (Weinheim) (20.01.2016)
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Journal Article
3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
Liu, Tingting, Kong, Yuechan, Wu, Lishu, Guo, Huaixin, Zhou, Jianjun, Kong, Cen, Chen, Tangsheng
Published in IEEE electron device letters (01.10.2017)
Published in IEEE electron device letters (01.10.2017)
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Journal Article
Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
Zou, Xuming, Wang, Jingli, Chiu, Chung-Hua, Wu, Yun, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen-Wei, Mai, Liqiang, Chen, Tangsheng, Li, Jinchai, Ho, Johnny C., Liao, Lei
Published in Advanced materials (Weinheim) (01.09.2014)
Published in Advanced materials (Weinheim) (01.09.2014)
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High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
Zhang, Kai, Kong, Yuechan, Zhu, Guangrun, Zhou, Jianjun, Yu, Xinxin, Kong, Cen, Li, Zhonghui, Chen, Tangsheng
Published in IEEE electron device letters (01.05.2017)
Published in IEEE electron device letters (01.05.2017)
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Journal Article
A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC
Xu, Yuehang, Wang, Changsi, Sun, Huan, Wen, Zhang, Wu, Yunqiu, Xu, Ruimin, Yu, Xuming, Ren, Chunjiang, Wang, Zhensheng, Zhang, Bin, Chen, Tangsheng, Gao, Tao
Published in IEEE transactions on microwave theory and techniques (01.08.2017)
Published in IEEE transactions on microwave theory and techniques (01.08.2017)
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Journal Article
An Electrothermal Model for Empirical Large- Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects
Wang, Changsi, Xu, Yuehang, Yu, Xuming, Ren, Chunjiang, Wang, Zhensheng, Lu, Haiyan, Chen, Tangsheng, Zhang, Bin, Xu, Ruimin
Published in IEEE transactions on microwave theory and techniques (01.12.2014)
Published in IEEE transactions on microwave theory and techniques (01.12.2014)
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Journal Article
Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3
Chen, Zhihao, Yu, Xinxin, Zhou, Jianjun, Mao, Shuman, Fu, Yu, Yan, Bo, Xu, Ruimin, Kong, Yuechan, Chen, Tangsheng, Li, Yanrong, Xu, Yuehang
Published in Applied physics letters (28.09.2020)
Published in Applied physics letters (28.09.2020)
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Journal Article
A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs
Wen, Zhang, Xu, Yuehang, Chen, Yongbo, Tao, Hongqi, Ren, Chunjiang, Lu, Haiyan, Wang, Zhensheng, Zheng, Weibin, Zhang, Bin, Chen, Tangsheng, Gao, Tao, Xu, Ruimin
Published in IEEE transactions on microwave theory and techniques (01.12.2017)
Published in IEEE transactions on microwave theory and techniques (01.12.2017)
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Journal Article
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
Yi Li, Yaxiong Guo, Kai Zhang, Xuming Zou, Jingli Wang, Yuechan Kong, Tangsheng Chen, Changzhong Jiang, Guojia Fang, Chuansheng Liu, Lei Liao
Published in IEEE transactions on electron devices (01.08.2017)
Published in IEEE transactions on electron devices (01.08.2017)
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Journal Article
High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation
Niu, Bin, Jing, Xu, Qian, Cheng, Wang, Chenquan, Kong, Yuechan, Chen, Tangsheng, Lu, Liangliang
Published in Results in physics (01.01.2023)
Published in Results in physics (01.01.2023)
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Journal Article
1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz
Yu, Xinxin, Hu, Wenxiao, Zhou, Jianjun, Liu, Bin, Tao, Tao, Kong, Yuechan, Chen, Tangsheng, Zheng, Youdou
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Zhang, Youtao, Dong, Xun, Lu, Haiyan, Chen, Tangsheng, Yang, Naibin
Published in IEEE electron device letters (01.03.2014)
Published in IEEE electron device letters (01.03.2014)
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Journal Article
Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
Wu, Yunqiu, Wu, Yun, Kang, Kai, Chen, Yuanfu, Li, Yanrong, Chen, Tangsheng, Xu, Yuehang
Published in AIP advances (01.09.2016)
Published in AIP advances (01.09.2016)
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Journal Article
Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide
Niu, Bin, Qian, Cheng, Jing, Xu, Wan, Chenquan, Kong, Yuechan, Chen, Tangsheng, Liu, Yichen, Lu, Liangliang
Published in Frontiers in physics (04.01.2023)
Published in Frontiers in physics (04.01.2023)
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Dynamic Spectral Modulation on Meta‐Waveguides Utilizing Liquid Crystal
Dong, Chengkun, Zhou, Ziwei, Gu, Xiaowen, Zhang, Yichen, Tong, Guodong, Wu, Zhihai, Zhang, Hao, Wang, Wenqi, Xia, Jun, Wu, Jun, Chen, Tangsheng, Guo, Jinping, Wang, Fan, Tang, Fengfan
Published in Advanced science (01.12.2023)
Published in Advanced science (01.12.2023)
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Journal Article
Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates
Qi, Yongle, Wang, Denggui, Zhou, Jianjun, Zhang, Kai, Kong, Yuechan, Wu, Suzhen, Chen, Tangsheng
Published in Na mi ji shu yu jing mi gong cheng (01.12.2020)
Published in Na mi ji shu yu jing mi gong cheng (01.12.2020)
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Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
Wang, Wen, Yu, Xinxin, Zhou, Jianjun, Chen, Dunjun, Zhang, Kai, Kong, Cen, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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