Edge termination strategies for a 4 kV 4H-SiC thyristor
BROSSELARD, P, PLANSON, D, SCHARNHOLZ, S, RAYNAUD, C, ZORNGIEBEL, V, LAZAR, M, CHANTE, J.-P, SPAHN, E
Published in Solid-state electronics (01.07.2006)
Published in Solid-state electronics (01.07.2006)
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OBIC analysis for 1.3 kV 6H–SiC p +n planar bipolar diodes protected by Junction Termination Extension
Raynaud, C, Wang, S.-R, Planson, D, Lazar, M, Chante, J.-P
Published in Diamond and related materials (01.09.2004)
Published in Diamond and related materials (01.09.2004)
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Optimal layout for 6H–SiC VJFET controlled current limiting device
Tournier, D., Jorda, X., Godignon, Ph, Planson, D., Chante, J.P., Sarrus, F.
Published in Diamond and related materials (01.03.2003)
Published in Diamond and related materials (01.03.2003)
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Conference Proceeding
Annealing studies of Al-implanted 6H-SiC in an induction furnace
Ottaviani, L., Lazar, M., Locatelli, M.L., Chante, J.P., Heera, V., Skorupa, W., Voelskow, M., Torchio, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
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Conference Proceeding
Avalanche behavior of low-voltage power MOSFETs
Buttay, C., Salah, T.B., Bergogne, D., Allard, B., Morel, H., Chante, J.-P.
Published in IEEE power electronics letters (01.09.2004)
Published in IEEE power electronics letters (01.09.2004)
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Journal Article
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Savkina, N.S., Lebedev, A.A., Davydov, D.V., Strel'chuk, A.M., Tregubova, A.S., Raynaud, C., Chante, J.-P., Locatelli, M.-L., Planson, D., Milan, J., Godignon, P., Campos, F.J., Mestres, N., Pascual, J., Brezeanu, G., Badila, M.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (07.08.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (07.08.2000)
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Developing an equivalent thermal model for discrete semiconductor packages
Ammous, Anis, Sellami, Fayçal, Ammous, Kaiçar, Morel, Hervé, Allard, Bruno, Chante, Jean-Pierre
Published in International journal of thermal sciences (01.05.2003)
Published in International journal of thermal sciences (01.05.2003)
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Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD
GALY, P, BERLAND, V, GUILHAUME, A, BLANC, F, CHANTE, J. P
Published in Microelectronics and reliability (01.09.2004)
Published in Microelectronics and reliability (01.09.2004)
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Conference Proceeding
Study of 6H–SiC high voltage bipolar diodes under reverse biases
Isoird, K., Lazar, M., Ottaviani, L., Locatelli, M.L., Raynaud, C., Planson, D., Chante, J.P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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Conference Proceeding
An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures
Salome, P., Leroux, C., Mariolle, D., Lafond, D., Chante, J.P., Crevel, P., Reimbold, G.
Published in Microelectronics and reliability (01.11.1998)
Published in Microelectronics and reliability (01.11.1998)
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Conference Proceeding
Experimental characterization of a 4H–SiC high voltage current limiting device
Nallet, F., Planson, D., Godignon, P., Locatelli, M.L., Lazar, M., Chante, J.P.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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Conference Proceeding
Design of a 600 V silicon carbide vertical power MOSFET
Planson, D, Locatelli, M.L, Lanois, F, Chante, J.P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Conference Proceeding
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges
Guilhaume, A., Galy, P., Chante, JP, Foucher, B., Blanc, F.
Published in Microelectronics and reliability (01.09.2001)
Published in Microelectronics and reliability (01.09.2001)
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Journal Article
Electrical characteristics modeling of large area boron: compensated 6H-SiC pn structures
Brezeanu, G., Badila, M., Tudor, B., Godignon, P., Millan, J., Locatelli, M.L., Chante, J.P., Lebedev, A., Savkina, N.S.
Published in Solid-state electronics (01.04.2000)
Published in Solid-state electronics (01.04.2000)
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Characterisation of deep level trap centres in 6H-SiC p-n junction diodes
Ghaffour, K., Lauer, V., Souifi, A., Guillot, G., Raynaud, C., Ortolland, S., Iocatelli, M.L., Chante, J.P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.12.1999)
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Conference Proceeding
P–N Junction creation in 6H-SiC by aluminum implantation
Ottaviani, L, Locatelli, M.L, Planson, D, Isoird, K, Chante, J.P, Morvan, E, Godignon, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Conference Proceeding
Carrier lifetime measurement by ramp recovery of p-i-n diodes
Gamal, S.H., Morel, H., Chante, J.P.
Published in IEEE transactions on electron devices (01.08.1990)
Published in IEEE transactions on electron devices (01.08.1990)
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Numerical modeling of gate turn-off thyristor using SICOS
Ni, D.-G., Rojat, G., Clerc, G., Chante, J.-P.
Published in IEEE transactions on industrial electronics (1982) (01.06.1993)
Published in IEEE transactions on industrial electronics (1982) (01.06.1993)
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