460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
Chia-Ta Chang, Shih-Kuang Hsiao, Chang, E.Y., Yu-Lin Hsiao, Jui-Chien Huang, Chung-Yu Lu, Huang-Choung Chang, Kai-Wen Cheng, Ching-Ting Lee
Published in IEEE photonics technology letters (01.10.2009)
Published in IEEE photonics technology letters (01.10.2009)
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Journal Article
Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
Chia-Ta Chang, Shih-Kuang Hsiao, Chang, E.Y., Chung-Yu Lu, Jui-Chien Huang, Ching-Ting Lee
Published in IEEE electron device letters (01.03.2009)
Published in IEEE electron device letters (01.03.2009)
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Journal Article
Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates
Hsiao, Yu-Lin, Chang, Chia-Ao, Chang, Edward Yi, Maa, Jer-Shen, Chang, Chia-Ta, Wang, Yi-Jie, Weng, You-Chen
Published in Applied physics express (01.05.2014)
Published in Applied physics express (01.05.2014)
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Journal Article
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
Chia-Ta Chang, Heng-Tung Hsu, Chang, E.Y., Chien-I Kuo, Jui-Chien Huang, Chung-Yu Lu, Miyamoto, Y.
Published in IEEE electron device letters (01.02.2010)
Published in IEEE electron device letters (01.02.2010)
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Journal Article
Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs
Jin-Yu Shiu, Jui-Chien Huang, Desmaris, V., Chia-Ta Chang, Chung-Yu Lu, Kumakura, K., Makimoto, T., Zirath, H., Rorsman, N., Chang, E.Y.
Published in IEEE electron device letters (01.06.2007)
Published in IEEE electron device letters (01.06.2007)
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Journal Article
Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents
WU, Yun-Chi, CHANG, Edward Yi, LIN, Yueh-Chin, KEI, Chi-Chung, HUDAIT, Mantu K, RADOSAVLJEVIC, Marko, WONG, Yuen-Yee, CHANG, Chia-Ta, HUANG, Jui-Chien, TANG, Shih-Hsuan
Published in Solid-state electronics (2010)
Published in Solid-state electronics (2010)
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Journal Article
Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures
Lu, Chung-Yu, Chang, Edward Yi, Huang, Jui-Chien, Chang, Chia-Ta, Lin, Mei-Hsuan, Lee, Ching-Tung
Published in Journal of electronic materials (01.05.2008)
Published in Journal of electronic materials (01.05.2008)
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Journal Article
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Huang, Jui-Chien, Hsu, Heng-Tung, Chang, Edward-Yi, Lu, Chung-Yu, Chang, Chia-Ta, Kuo, Fang-Yao, Chen, Yi-Chung, Hsu, Ting-Hung
Published in Japanese Journal of Applied Physics (01.01.2010)
Published in Japanese Journal of Applied Physics (01.01.2010)
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Journal Article
Investigation of impact ionization from InxGa1-xAs to InAs Channel HEMTs for high speed and low power applications
Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Chang, Chia-Ta, Chang, Chia-Yuan, Miyamoto, Yasuyuki
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
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Conference Proceeding
RF characteristics of AlGaN/GaN HEMTs under different temperatures
Yu-Sheng Chiu, Jui-Chien Huang, Tai-Ming Lin, Yu-Ting Chou, Chung-Yu Lu, Chia-Ta Chang, Chang, E. Y.
Published in 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) (01.09.2012)
Published in 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) (01.09.2012)
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Conference Proceeding
Study of the inversion behaviors of Al sub(2)O sub(3)/In sub(x)Ga sub(1-x)As metal-oxide-semiconductor capacitors with different In contents
Wu, Yun-Chi, Chang, Edward Yi, Lin, Yueh-Chin, Kei, Chi-Chung, Hudait, Mantu K, Radosavljevic, Marko, Wong, Yuen-Yee, Chang, Chia-Ta, Huang, Jui-Chien, Tang, Shih-Hsuan
Published in Solid-state electronics (01.01.2010)
Published in Solid-state electronics (01.01.2010)
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Journal Article
Study of the inversion behaviors of Al 2O 3/In x Ga 1− x As metal–oxide–semiconductor capacitors with different In contents
Wu, Yun-Chi, Chang, Edward Yi, Lin, Yueh-Chin, Kei, Chi-Chung, Hudait, Mantu K., Radosavljevic, Marko, Wong, Yuen-Yee, Chang, Chia-Ta, Huang, Jui-Chien, Tang, Shih-Hsuan
Published in Solid-state electronics (2010)
Published in Solid-state electronics (2010)
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Journal Article