A 16 nm 128 Mb SRAM in High- \kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications
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Published in IEEE journal of solid-state circuits (01.01.2015)
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Journal Article
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Published in IEEE journal of solid-state circuits (01.04.2012)
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Conference Proceeding
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low- V MIN Applications
Chang, Tsung-Yung Jonathan, Chen, Yen-Huei, Chan, Wei-Min, Cheng, Hank, Wang, Po-Sheng, Lin, Yangsyu, Fujiwara, Hidehiro, Lee, Robin, Liao, Hung-Jen, Wang, Ping-Wei, Yeap, Geoffrey, Li, Quincy
Published in IEEE journal of solid-state circuits (01.01.2021)
Published in IEEE journal of solid-state circuits (01.01.2021)
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Published in CLEO: 2013 (01.06.2013)
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Year of Publication 19.12.2023
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Year of Publication 26.06.2023
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WU WEI CHENG, CHAN WEI MIN, LIN KAO CHENG, YU CHIH CHENG, LI PEI YUAN, LIN CHIEN CHEN, CHEN YEN HUEI
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Year of Publication 20.08.2021
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A smart approach for process variation correlation modeling
Chung-Kai Lin, Cheng Hsiao, Wei-Min Chan, Min-Chie Jeng
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
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Conference Proceeding
MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
LIN CHIH YU, CHAN WEI MIN, CHEN YEN HUEI, LIAO HUNG JEN, FUJIWARA HIDEHIRO
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Year of Publication 07.05.2019
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전도성 막 층 두께 측정들을 위한 방법들, 장치들 및 시스템들
CHAN WEI MIN, MA PAUL, BUDIARTO EDWARD, WANG PEIQI, EGAN TODD J, WU KAI, XU KUN
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Year of Publication 01.02.2021
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MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
LIN CHIH YU, CHAN WEI MIN, CHEN YEN HUEI, LIAO HUNG JEN, FUJIWARA HIDEHIRO
Year of Publication 10.05.2018
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Year of Publication 10.05.2018
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MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
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Year of Publication 28.04.2017
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Year of Publication 28.04.2017
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WU WEI CHENG, LIN CHIH YU, CHAN WEI MIN, LIN KAO CHENG, CHEN YEN HUEI
Year of Publication 27.06.2017
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Year of Publication 27.06.2017
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CONFIGURABLE MEMORY STORAGE SYSTEM
LIN YANGSYU, YANG CHEN LIN, CHAN WEI MIN, LEE CHENG HUNG, HSU YU HAO, WU FU AN, CHENG CHITING, LIN CHIEN CHEN, CHANG JONATHAN TSUNG YUNG, CHEN YEN HUEI, LIAO HUNG JEN, YANG JUNG PING
Year of Publication 09.01.2019
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Year of Publication 09.01.2019
Patent
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications
Chang, Tsung-Yung Jonathan, Chen, Yen-Huei, Chan, Wei-Min, Cheng, Hank, Wang, Po-Sheng, Lin, Yangsyu, Fujiwara, Hidehiro, Lee, Robin, Liao, Hung-Jen, Wang, Ping-Wei, Yeap, Geoffrey, Li, Quincy
Published in IEEE journal of solid-state circuits (01.01.2021)
Published in IEEE journal of solid-state circuits (01.01.2021)
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Journal Article
A 16nm dual-port SRAM with partial suppressed word-line, dummy read recovery and negative bit-line circuitries for low VMIN applications
Yen-Huei Chen, Kao-Cheng Lin, Ching-Wei Wu, Wei-Min Chan, Jhon-Jhy Liaw, Hung-Jen Liao, Chang, Jonathan
Published in 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) (01.06.2016)
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Conference Proceeding