GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer
Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.09.2008)
Published in Technical physics letters (01.09.2008)
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International Pilot Comparisons in the Field of Ultrasound Power Measurements in Water
Enyakov, A. M., Kizlivskyi, I., Kuznetsov, S. I., Chalyi, V. P.
Published in Measurement techniques (01.07.2017)
Published in Measurement techniques (01.07.2017)
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Microwave field-effect transistors based on group-III nitrides
Aleksandrov, S. B., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Stepanov, M. V., Chalyi, V. P., Gladysheva, N. B., Dorofeev, A. A., Matveev, Yu. A., Chernyavskii, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
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Estimating the Uncertainty of a Primary Acoustic Standard by Numerical Methods
Chalyi, V P, Parakuda, V V, Kosterov, A A, Gaiduk, N V, Faida, A M
Published in Measurement techniques (01.05.2005)
Published in Measurement techniques (01.05.2005)
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MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen
Petrov, S. I., Kaidash, A. P., Krasovitskii, D. M., Sokolov, I. A., Pogorel’skii, Yu. V., Chalyi, V. P., Shkurko, A. P., Stepanov, M. V., Pavlenko, M. V., Baranov, D. A.
Published in Technical physics letters (01.07.2004)
Published in Technical physics letters (01.07.2004)
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100-Watt laser bars based on phase-locked arrays
Demidov, D. M., Ivkin, A. N., Katsavets, N. I., Kokin, S. V., Leus, R. V., Ter-Martirosyan, A. L., Chalyi, V. P.
Published in Technical physics letters (01.01.2001)
Published in Technical physics letters (01.01.2001)
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Powerful highly stable laser diodes for pumping of solid-state lasers
Demidov, D M, Katsavets, N I, Ter-Martirosyan, A L, Chalyi, V P
Published in Quantum electronics (Woodbury, N.Y.) (30.09.1998)
Published in Quantum electronics (Woodbury, N.Y.) (30.09.1998)
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Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system
Alekseev, A. N., Byrnaz, A. É., Krasovitsky, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’sky, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Shkurko, A. P., Chalyi, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2007)
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AlGaAs/GaAs-heterostructure cw laser diodes with a working output optical power of 3 W (λ=0.81 μm) and an operating life of 2000 hours
Demidov, D. M., Katsavets, N. I., Leus, R. V., Ter-Martirosyan, A. L., Chalyi, V. P.
Published in Technical physics letters (01.04.1997)
Published in Technical physics letters (01.04.1997)
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Journal Article
Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2008)
Published in Technical physics letters (01.08.2008)
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Journal Article
AlGaN/GaN HEMTs grown by ammonia MBE
Volkov, V. V., Ivanova, V. P., Kuz’michev, Yu. S., Lermontov, S. A., Solov’ev, Yu. V., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyi, V. P.
Published in Technical physics letters (01.05.2004)
Published in Technical physics letters (01.05.2004)
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MBE-grown nanoheterostructures with increased electron mobility
Alekseev, A. N., Petrov, S. I., Nevolin, V. K., Tsarik, K. A., Krasovitskii, D. M., Chalyi, V. P.
Published in Russian microelectronics (01.12.2012)
Published in Russian microelectronics (01.12.2012)
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Journal Article
Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.04.2008)
Published in Technical physics letters (01.04.2008)
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Journal Article
AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 μm) IR photodetectors
Butyagin, O. F., Katsavets, N. I., Kogan, I. V., Krasovitsky, D. M., Kulikov, V. B., Chalyi, V. P., Dudin, A. L., Cherednichenko, O. B.
Published in Technical physics letters (01.05.2012)
Published in Technical physics letters (01.05.2012)
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Journal Article
Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.11.2006)
Published in Technical physics letters (01.11.2006)
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