nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm
Kulikov, V. B., Maslov, D. V., Sabirov, A. R., Solodkov, A. A., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Shukov, I. V., Chaly, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm
Dudin, A. L., Katsavets, N. I., Krasovitsky, D. M., Kokin, S. V., Chaly, V. P., Shukov, I. V.
Published in Journal of communications technology & electronics (01.03.2018)
Published in Journal of communications technology & electronics (01.03.2018)
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Journal Article
Technology development for GaN based power microwave DHFET
Alexeev, A N, Chaly, V P, Krasovitsky, D M, Mamaev, V V, Petrov, S I, Sidorov, V G, Arcebashev, N S
Published in Journal of physics. Conference series (01.02.2016)
Published in Journal of physics. Conference series (01.02.2016)
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Journal Article
Features and benefits of III-N growth by ammonia-MBE and plasma assisted MBE
Alexeev, A N, Chaly, V P, Krasovitsky, D M, Mamaev, V V, Petrov, S I, Sidorov, V G
Published in Journal of physics. Conference series (01.01.2014)
Published in Journal of physics. Conference series (01.01.2014)
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Journal Article
Growth of high quality III-N heterostructures using specialized MBE system
Petrov, S. I., Alexeev, A. N., Krasovitsky, D. M., Chaly, V. P.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE
Aleksandrov, S. B., Baranov, D. A., Chaly, V. P., Krasovitsky, D. M., Pavlenko, M. V., Petrov, S. I., Pogorelsky, Yu. V., Sokolov, I. A., Sokolov, M. A., Velikovsky, L. E., Podolskaya, N. I., Bulashevich, K. A., Karpov, S. Yu
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
A degradation rate study of MBE-grown high-power AlGaAs laser diodes
Chaly, V P, Etinberg, M I, Fokin, G A, Karpov, S Yu, Myachin, V, Ostrovsky, A Yu, Pogorelsky, Yu V, Rusanovich, I Yu, Sokolov, A, Shcurko, A P, Strugov, N A, Ter-Martirosyan, A L
Published in Semiconductor science and technology (01.04.1994)
Published in Semiconductor science and technology (01.04.1994)
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Journal Article
Mechanisms of optical confinement in phase-locked laser arrays
Chaly, V P, Karpov, S Yu, Ter-Martirosyan, A L, Titov, D V, Guo, Wang Zhang
Published in Semiconductor science and technology (01.03.1996)
Published in Semiconductor science and technology (01.03.1996)
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Journal Article
Indium droplet formation during molecular beam epitaxy of InGaN
Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu
Published in Journal of crystal growth (01.10.1999)
Published in Journal of crystal growth (01.10.1999)
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Journal Article
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 [mu]m
Kulikov, V. B, Maslov, D. V, Sabirov, A. R, Solodkov, A. A, Dudin, A. L, Katsavets, N. I, Kogan, I. V
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Journal Article
High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures
Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2002)
Published in Technical physics letters (01.08.2002)
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Journal Article
Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy
Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
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Journal Article
Use of molecular beam epitaxy for high-power AlGaAs laser production
Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
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Journal Article
Features of ammonia and plasma assisted MBE growth for development and production of III-nitrides based heterostructures for advanced nanoelectronics
Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P., Mamaev, V. V.
Published in 2014 24th International Crimean Conference Microwave & Telecommunication Technology (01.09.2014)
Published in 2014 24th International Crimean Conference Microwave & Telecommunication Technology (01.09.2014)
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Conference Proceeding
Russian technological equipment set for high power microwave fet's and circuits based on GaAs and GaN
Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P., Filaretov, A. G.
Published in 2013 23rd International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2013)
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Published in 2013 23rd International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2013)
Conference Proceeding
Challenges and prospects of A3B5 microvawe foundry
Krasovitsky, D. M., Dudin, A. L., Katsavets, N. I., Kokin, S. V., Filaretov, A. G., Chaly, V. P., Viuginov, V. N.
Published in 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2012)
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Published in 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" (01.09.2012)
Conference Proceeding