Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., Chalker, P. R., Tripathy, S., Potter, R. J.
Published in Journal of applied physics (21.07.2019)
Published in Journal of applied physics (21.07.2019)
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Journal Article
Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Hall, S., Robertson, J., Chalker, P. R.
Published in Applied physics letters (28.08.2017)
Published in Applied physics letters (28.08.2017)
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Journal Article
Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements
Tao, J, Zhao, C Z, Zhao, C, Taechakumput, P, Werner, M, Taylor, S, Chalker, P R
Published in Materials (01.06.2012)
Published in Materials (01.06.2012)
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Journal Article
Book Review
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, Ivona Z., Dhanak, V. R.
Published in AIP advances (01.06.2018)
Published in AIP advances (01.06.2018)
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Journal Article
Embedded fibre Bragg grating sensors in advanced composite materials
Kuang, K.S.C., Kenny, R., Whelan, M.P., Cantwell, W.J., Chalker, P.R.
Published in Composites science and technology (01.08.2001)
Published in Composites science and technology (01.08.2001)
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Journal Article
Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes
Willcocks, A. M, Pugh, T, Cosham, S. D, Hamilton, J, Sung, S. L, Heil, T, Chalker, P. R, Williams, P. A, Kociok-Köhn, G, Johnson, A. L
Published in Inorganic chemistry (18.05.2015)
Published in Inorganic chemistry (18.05.2015)
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Journal Article
Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.
Published in Journal of crystal growth (15.10.2007)
Published in Journal of crystal growth (15.10.2007)
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Journal Article
Selective laser sintering of barium titanate–polymer composite films
Clare, A. T, Chalker, P. R, Davies, S, Sutcliffe, C. J, Tsopanos, S
Published in Journal of materials science (01.05.2008)
Published in Journal of materials science (01.05.2008)
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Journal Article
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Moloney, J, Tesh, O, Singh, M, Roberts, J W, Jarman, J C, Lee, L C, Huq, T N, Brister, J, Karboyan, S, Kuball, M, Chalker, P R, Oliver, R A, Massabuau, F C-P
Published in Journal of physics. D, Applied physics (20.11.2019)
Published in Journal of physics. D, Applied physics (20.11.2019)
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Journal Article
Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3
Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W., Massabuau, F. C.-P.
Published in Applied physics letters (06.02.2023)
Published in Applied physics letters (06.02.2023)
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Journal Article
Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires
Lari, L., Walther, T., Gass, M.H., Geelhaar, L., Chèze, C., Riechert, H., Bullough, T.J., Chalker, P.R.
Published in Journal of crystal growth (15.07.2011)
Published in Journal of crystal growth (15.07.2011)
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Journal Article
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., Sedghi, N., Hall, S., Chalker, P. R., Tsoutsou, D., Dimoulas, A.
Published in Journal of applied physics (21.03.2014)
Published in Journal of applied physics (21.03.2014)
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Journal Article
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Gottlob, H.D.B., Schmidt, M., Stefani, A., Lemme, M.C., Kurz, H., Mitrovic, I.Z., Davey, W.M., Hall, S., Werner, M., Chalker, P.R., Cherkaoui, K., Hurley, P.K., Piscator, J., Engström, O., Newcomb, S.B.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., Dimitrakopulos, G. P., Kehagias, Th, Komninou, Ph, Karakostas, Th, Chèze, C., Geelhaar, L., Riechert, H.
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
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Journal Article
Conference Proceeding
Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct
Kanjolia, R., Jones, A.C., Ashraf, S., Bacsa, J., Black, K., Chalker, P.R., Beahan, P., Hindley, S., Odedra, R., Williams, P.A., Heys, P.N.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
Conference Proceeding
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
Roberts, J. W., Chalker, P. R., Lee, K. B., Houston, P. A., Cho, S. J., Thayne, I. G., Guiney, I., Wallis, D., Humphreys, C. J.
Published in Applied physics letters (15.02.2016)
Published in Applied physics letters (15.02.2016)
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Journal Article
Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., Taechakumput, P., Taylor, S., Heys, P. N., Odedra, R.
Published in Chemical vapor deposition (01.11.2007)
Published in Chemical vapor deposition (01.11.2007)
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Journal Article
Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques
Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., Smith, L. M., Critchlow, G. W., Schumacher, M.
Published in Chemical vapor deposition (01.03.2005)
Published in Chemical vapor deposition (01.03.2005)
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