Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Sunil, Athira, Rana SK, Masud, Lederer, Maximilian, Raffel, Yannick, Müller, Franz, Olivo, Ricardo, Hoffmann, Raik, Seidel, Konrad, Kämpfe, Thomas, Chakrabarti, Bhaswar, De, Sourav
Published in Advanced intelligent systems (01.04.2024)
Published in Advanced intelligent systems (01.04.2024)
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Journal Article
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Sk, Masud Rana, Pande, Shubham, Müller, Franz, Raffel, Yannick, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Kämpfe, Thomas, De, Sourav, Chakrabarti, Bhaswar
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
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Journal Article
28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview
Raffel, Yannick, Müller, Franz, Thunder, Sunanda, Sk, Masud Rana, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Chakrabarti, Bhaswar, Kämpfe, Thomas, De, Sourav
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
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Journal Article
A physics-based compact model of thermal resistance in RRAMs
Pande, Shubham, Balanethiram, Suresh, Chakrabarti, Bhaswar, Chakravorty, Anjan
Published in Solid-state electronics (01.06.2023)
Published in Solid-state electronics (01.06.2023)
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Journal Article
Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective
Haensch, Wilfried, Raghunathan, Anand, Roy, Kaushik, Chakrabarti, Bhaswar, Phatak, Charudatta M, Wang, Cheng, Guha, Supratik
Published in Advanced materials (Weinheim) (01.09.2023)
Published in Advanced materials (Weinheim) (01.09.2023)
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Journal Article
Insulator-to-metal phase transition in a few-layered MoSe field effect transistor
Pradhan, Nihar R, Garcia, Carlos, Chakrabarti, Bhaswar, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V, Miller, Suzanne, Hilton, David, Karaiskaj, Denis, McGill, Stephen A
Published in Nanoscale (09.02.2023)
Published in Nanoscale (09.02.2023)
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Journal Article
Controllable Defect Engineering in 2D-MoS2 for high-performance, threshold switching memristive devices
Thool, Asmita S., Roy, Sourodeep, Misra, Abhishek, Chakrabarti, Bhaswar
Published in 2022 Device Research Conference (DRC) (26.06.2022)
Published in 2022 Device Research Conference (DRC) (26.06.2022)
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Conference Proceeding
Insulator-to-metal phase transition in a few-layered MoSe 2 field effect transistor
Pradhan, Nihar R, Garcia, Carlos, Chakrabarti, Bhaswar, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V, Miller, Suzanne, Hilton, David, Karaiskaj, Denis, McGill, Stephen A
Published in Nanoscale (09.02.2023)
Published in Nanoscale (09.02.2023)
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Journal Article
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis
Chakrabarti, Bhaswar, Chan, Henry, Alam, Khan, Koneru, Aditya, Gage, Thomas E, Ocola, Leonidas E, Divan, Ralu, Rosenmann, Daniel, Khanna, Abhishek, Grisafe, Benjamin, Sanders, Toby, Datta, Suman, Arslan, Ilke, Sankaranarayan, Subramanian K. R. S, Guha, Supratik
Published in ACS nano (23.03.2021)
Published in ACS nano (23.03.2021)
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Journal Article
Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS 2 Film
Thool, Asmita S., Roy, Sourodeep, Mukherjee, Upasana, Barman, Prahalad Kanti, Poudyal, Saroj, Misra, Abhishek, Chakrabarti, Bhaswar
Published in ACS applied electronic materials (27.02.2024)
Published in ACS applied electronic materials (27.02.2024)
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Journal Article
Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS2 Film
Thool, Asmita S., Roy, Sourodeep, Mukherjee, Upasana, Barman, Prahalad Kanti, Poudyal, Saroj, Misra, Abhishek, Chakrabarti, Bhaswar
Published in ACS applied electronic materials (27.02.2024)
Published in ACS applied electronic materials (27.02.2024)
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Journal Article
Insulator-to-metal phase transition in a few-layered MoSe2 field effect transistor
Pradhan, Nihar R, Garcia, Carlos, Chakrabarti, Bhaswar, Rosenmann, Daniel, Divan, Ralu, Sumant, Anirudha V, Miller, Suzanne, Hilton, David, Karaiskaj, Denis, McGill, Stephen A
Published in Nanoscale (09.02.2023)
Published in Nanoscale (09.02.2023)
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Journal Article
Asymmetric Resistive Switching of Bilayer HfO x /AlO y and AlO y /HfO x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching
Basnet, Pradip, Anderson, Erik C., Athena, Fabia Farlin, Chakrabarti, Bhaswar, West, Matthew P., Vogel, Eric M.
Published in ACS applied electronic materials (28.03.2023)
Published in ACS applied electronic materials (28.03.2023)
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Journal Article