Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy
Shin, Seungheon, Kim, Kyoung Hwa, Lee, Gang Seok, Lee, Jae Hak, Ahn, Hyung Soo, Cha, Ho-Young
Published in Results in physics (01.09.2022)
Published in Results in physics (01.09.2022)
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Journal Article
Proton Bombardment Effects on Normally- off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs
Keum, Dong Min, Cha, Ho-Young, Kim, Hyungtak
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
Choi, Uiho, Kim, Hyun-Seop, Lee, Kyeongjae, Jung, Donghyeop, Kwak, Taemyung, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Kang, Myoung-Jin, Seo, Kwang-Seok, Han, Min, Choi, Seokgyu, Lee, Sangmin, Cha, Ho-Young, Nam, Okhyun
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE
Sang-Woo, Han, Noh, Youngkyun, Min-Gi Jo, Kim, Seung-Hwan, Oh, Jae-Eung, Kwang-Seok Seo, Ho-Young, Cha
Published in IEEE electron device letters (01.12.2016)
Published in IEEE electron device letters (01.12.2016)
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Journal Article
Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
Kim, Hyeon-Ji, Yim, Jun-Hyeok, Kim, Hyungtak, Cha, Ho-Young
Published in Electronics (Basel) (01.10.2023)
Published in Electronics (Basel) (01.10.2023)
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Journal Article
Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process
Jang, Won-Ho, Yim, Jun-Hyeok, Kim, Hyungtak, Cha, Ho-Young
Published in Electronics (Basel) (01.04.2023)
Published in Electronics (Basel) (01.04.2023)
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Journal Article
High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON
Hwang, Il‐Hwan, Eom, Su‐Keun, Choi, Gwang‐Ho, Kang, Myoung‐Jin, Lee, Jae‐Gil, Cha, Ho‐Young, Seo, Kwang‐Seok
Published in Physica status solidi. A, Applications and materials science (23.05.2018)
Published in Physica status solidi. A, Applications and materials science (23.05.2018)
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Journal Article
P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process
Jang, Won-Ho, Seo, Kwang-Seok, Cha, Ho-Young
Published in Journal of semiconductor technology and science (01.12.2020)
Published in Journal of semiconductor technology and science (01.12.2020)
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Journal Article
Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs
Kang, Myoung-Jin, Kim, Hyun-Seop, Cha, Ho-Young, Seo, Kwang-Seok
Published in Crystals (Basel) (01.09.2020)
Published in Crystals (Basel) (01.09.2020)
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Journal Article
A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz
Lee, Min-Seong, Kim, Donghwan, Eom, Sukeun, Cha, Ho-Young, Seo, Kwang-Seok
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Journal Article
Diode Bridge Embedded AlGaN/GaN Bidirectional Switch
Park, Bong-Ryeol, Han, Sang-Woo, Cha, Ho-Young
Published in IEEE electron device letters (01.04.2015)
Published in IEEE electron device letters (01.04.2015)
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Journal Article
High‐performance normally off AlGaN/GaN‐on‐Si HEMTs with partially recessed SiNx MIS structure
Kang, Myoung‐Jin, Lee, Min‐Seong, Choi, Gwang‐Ho, Hwang, Il‐Hwan, Cha, Ho‐Young, Seo, Kwang‐Seok
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
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Journal Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths
Park, Youngrak, Kim, Jung-Jin, Chang, Woojin, Jang, Hyun-Gyu, Na, Jeho, Lee, Hyunsoo, Jun, Chi-Hoon, Cha, Ho-young, Mun, Jae Kyoung, Ko, Sang Choon, Nam, Eun Soo
Published in Electronics letters (31.07.2014)
Published in Electronics letters (31.07.2014)
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Journal Article
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
Kim, Tae-Hyeon, Jang, Won-Ho, Yim, Jun-Hyeok, Cha, Ho-Young
Published in Micromachines (Basel) (10.03.2021)
Published in Micromachines (Basel) (10.03.2021)
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Journal Article