An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
Maldonado, D., Aguilera-Pedregosa, C., Vinuesa, G., García, H., Dueñas, S., Castán, H., Aldana, S., González, M.B., Moreno, E., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.
Published in Chaos, solitons and fractals (01.07.2022)
Published in Chaos, solitons and fractals (01.07.2022)
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Journal Article
Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Jiménez-Molinos, F., Vinuesa, G., García, H., Dueñas, S., Castán, H., González, M.B., Campabadal, F., Roldán, J.B.
Published in Materials science in semiconductor processing (15.08.2024)
Published in Materials science in semiconductor processing (15.08.2024)
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Journal Article
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
García, H., Jiménez-Molinos, F., Vinuesa, G., González, M.B., Roldán, J.B., Miranda, E., Campabadal, F., Castán, H., Dueñas, S.
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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Journal Article
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Vinuesa, G., Ossorio, O.G., García, H., Sahelices, B., Castán, H., Dueñas, S., Kull, M., Tarre, A., Jogiaas, T., Tamm, A., Kasikov, A., Kukli, K.
Published in Solid-state electronics (01.09.2021)
Published in Solid-state electronics (01.09.2021)
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Journal Article
Variability and power enhancement of current controlled resistive switching devices
Vinuesa, G., García, H., Lendínez, J.M., García-Ochoa, E., González, M.B., Maldonado, D., Aguilera-Pedregosa, C., Moreno, E., Jiménez-Molinos, F., Roldán, J.B., Campabadal, F., Castán, H., Dueñas, S.
Published in Microelectronic engineering (01.05.2023)
Published in Microelectronic engineering (01.05.2023)
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Journal Article
Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
Ossorio, O. G., Vinuesa, G., García, H., Sahelices, B., Dueñas, S., Castán, H., Pérez, E., Mahadevaiah, M. K., Wenger, Ch
Published in ECS journal of solid state science and technology (05.08.2021)
Published in ECS journal of solid state science and technology (05.08.2021)
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Journal Article
Obtaining fast dissolving disintegrating tablets with different doses of melatonin
Muñoz, H., Castan, H., Clares, B., Ruiz, M.A.
Published in International journal of pharmaceutics (05.06.2014)
Published in International journal of pharmaceutics (05.06.2014)
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Journal Article
Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition
Castán, H., García, H., Dueñas, S., Bailón, L., Miranda, E., Kukli, K., Kemell, M., Ritala, M., Leskelä, M.
Published in Thin solid films (30.09.2015)
Published in Thin solid films (30.09.2015)
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Journal Article
2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics
Rafí, J.M., Campabadal, F., Ohyama, H., Takakura, K., Tsunoda, I., Zabala, M., Beldarrain, O., González, M.B., García, H., Castán, H., Gómez, A., Dueñas, S.
Published in Solid-state electronics (01.01.2013)
Published in Solid-state electronics (01.01.2013)
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Journal Article
(Invited) A Complete Suite of Experimental Techniques for Electrical Characterization of Conventional and Incoming High-k Dielectric-Based Devices
Dueñas, Salvador, Castán, Helena, García, Héctor, Arroval, Tonis, Tamm, Aile, Kukli, Kaupo, Aarik, Jaan
Published in ECS transactions (26.04.2016)
Published in ECS transactions (26.04.2016)
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Journal Article
Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
García, H., Dueñas, S., Castán, H., Gómez, A., Bailón, L., Toledano-Luque, M., del Prado, A., Mártil, I., González-Díaz, G.
Published in Journal of applied physics (01.11.2008)
Published in Journal of applied physics (01.11.2008)
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Journal Article
Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors
García, Héctor, Gonzalez, Mireia, Vaca, Cesar, Castán, Helena, Dueñas, Salvador, Campabadal, Francesca, Miranda, Enrique, Bailon, Luis
Published in ECS transactions (01.01.2016)
Published in ECS transactions (01.01.2016)
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Journal Article
Comparative Study of Flatband Voltage Transients on High-k Dielectric-Based Metal–Insulator–Semiconductor Capacitors
Dueñas, S., Castán, H., García, H., Gómez, A., Bailón, L., Kukli, K., Aarik, J., Ritala, M., Leskelä, M.
Published in Journal of the Electrochemical Society (2008)
Published in Journal of the Electrochemical Society (2008)
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Journal Article
Controlling the intermediate conductance states in RRAM devices for synaptic applications
García, H., Ossorio, O.G., Dueñas, S., Castán, H.
Published in Microelectronic engineering (15.07.2019)
Published in Microelectronic engineering (15.07.2019)
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Journal Article
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
García, H, Vinuesa, G, García-Ochoa, E, Aguirre, F L, González, M B, Jiménez-Molinos, F, Campabadal, F, Roldán, J B, Miranda, E, Dueñas, S, Castán, H
Published in Journal of physics. D, Applied physics (07.09.2023)
Published in Journal of physics. D, Applied physics (07.09.2023)
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Journal Article
Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Jiménez-Molinos, F., Vinuesa, G., García, H., Tarre, A., Tamm, A., Kalam, K., Kukli, K., Dueñas, S., Castán, H., González, M. B., Campabadal, F., Roldán, J. B.
Published in Journal of applied physics (21.11.2022)
Published in Journal of applied physics (21.11.2022)
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Journal Article
Dynamics of set and reset processes on resistive switching memories
Dueñas, S., Castán, H., Ossorio, O.G., García, H.
Published in Microelectronic engineering (15.08.2019)
Published in Microelectronic engineering (15.08.2019)
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Journal Article
Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
Castán, H., Dueñas, S., García, H., Ossorio, O. G., Domínguez, L. A., Sahelices, B., Miranda, E., González, M. B., Campabadal, F.
Published in Journal of applied physics (21.10.2018)
Published in Journal of applied physics (21.10.2018)
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Journal Article
Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices
García, H., Dueñas, S., Castán, H., Bailón, L., Kukli, K., Aarik, J., Ritala, M., Leskelä, M.
Published in Journal of non-crystalline solids (15.01.2008)
Published in Journal of non-crystalline solids (15.01.2008)
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Journal Article
Conference Proceeding
Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films
Dueñas, S., Castán, H., García, H., Bailón, L., Kukli, K., Lu, J., Ritala, M., Leskelä, M.
Published in Journal of non-crystalline solids (15.01.2008)
Published in Journal of non-crystalline solids (15.01.2008)
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Journal Article
Conference Proceeding